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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SD111
DESCRIPTION
·High Power Dissipation-
: PC= 100W@TC= 25
·High Current Capability-
: IC = 10A
APPLICATIONS
·Designed for power amplifier , power switching ,DC-DC
converter and regulator applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
100 V
VCEO
VEBO
Collector-Emitter Voltage
Emitter-Base Voltage
80 V
10 V
IC Collector Current-Continuous
10 A
IE Emitter Current-Continuous
IB Base Current-Continuous
-10 A
3A
PC
Collector Power Dissipation @TC=25
100
W
TJ Junction Temperature
Tstg Storage Temperature
150
-65~150
isc websitewww.iscsemi.cn
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SD111
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA ; RBE=
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 50mA ; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 1A
VBE(sat) Base-Emitter Saturation Voltage
IC= 5A; IB= 1A
ICBO Collector Cutoff Current
VCB= 50V; IE= 0
IEBO Emitter Cutoff Current
hFE-1
DC Current Gain
hFE-2
DC Current Gain
fT Current-Gain—Bandwidth Product
COB Output Capacitance
VEB= 10V; IC=0
IC= 1A; VCE= 5V
IC= 5A; VCE= 5V
IC= 1A ; VCE= 10V
IE= 0; VCB= 50V; f= 1MHz
MIN TYP. MAX UNIT
80 V
10 V
1.5 V
2.5 V
0.5 mA
10 mA
30 300
10
1 MHz
200 pF
‹ hFE-2 Classifications
ROY
30-90 50-150 100-300
isc websitewww.iscsemi.cn
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