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NPN Transistors
■■ APPLICATIONAudio Muting Applications.
D1303
—NPN Silicon—
■■ MAXIMUM RATINGSTa=25℃)
PARAMETER
SYMBOL RATING UNIT
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector Power Dissipation
VCBO
VCEO
VEBO
Ic
Ib
Pc
25 V
20 V
12 V
0.3 A
0.03 A
0.4 W
Junction Temperature
Storage Temperature Range
Tj 150
Tstg -55~150
■■ ELECTRICAL CHARACTERISTICSTa=25℃,RG=10%
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT
TEST CONDITION
Collector-Base Breakdown Voltage BVcbo
25
V Ic=10uA Ie=0
Collector-Emitter Breakdown Voltage BVceo
20
V Ic=1mA Ib=0
Emitter-Base Breakdown Voltage BVebo 12
V Ie=10uA Ic=0
Collector Cut-off Current
Icbo
0.1 uA Vcb=25V Ie=0
Emitter Cut-off Current
Iebo
0.1 uA Veb=12V Ic=0
Base-Emitter Saturation Voltage Vbe(sat)
1 V Ic=0.1A Ib=10mA
Collector-Emitter Saturation Voltage Vce(sat)
0.25 V Ic=0.1A Ib=1mA
DC Current Gain
Gain bandwidth product
hFE 200
800 , Vce=2V Ic=4mA
fT 60 MHz Vce=10V Ic=1mA
Common Base Output Capacitance Cob
10 pF Vcb=10V Ie=0 f=1MHz
■■ hFE Classification And Marking
Mark
D1303
Classification
hFE
200800