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Ordering number:2041A
PNP/NPN Epitaxial Planar Silicon Transistors
2SB1144/2SD1684
100V/1.5A Switching Applications
Features
· Adoption of FBET and MBIT processes.
· High breakdown voltage.
· Low saturation voltage.
· Plastic-covered heat sink facilitating high-density
mounting.
Package Dimensions
unit:mm
2042B
[2SB1144/2SD1684]
( ) : 2SB1144
1 : Emitter
2 : Collector
3 : Base
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Junction Temperature
Storage Temperature
Tj
Tstg
Tc=25˚C
Conditions
SANYO : TO-126ML
Ratings
(–)120
(–)100
(–)6
(–)1.5
(–)2.0
1.5
10
150
–55 to +150
Unit
V
V
V
A
A
W
W
˚C
˚C
Electrical Characteristics at Ta = 25˚C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Symbol
Conditions
ICBO
IEBO
hFE1
hFE2
fT
VCB=(–)100V, IE=0
VEB=(–)4V, IC=0
VCE=(–)5V, IC=(–)100mA
VCE=(–)5V, IC=(–)1A
VCE=(–)10V, IC=(–)50mA
Output Capacitance
Cob VCB=(–)10V, f=1MHz
* : The 2SB1144/2SD1684 are classified by 100mA hFE as follows :
100 Q 200
140 S 280
Ratings
min typ
100*
30
(100)
120
11(18)
max
(–)100
(–)100
400*
Unit
nA
nA
MHz
MHz
pF
200 T 400
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
92098HA (KT)/10996TS (KOTO) 8-8500/4107KI/6106AT, TS No.2041–1/4

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Parameter
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
2SB1144/2SD1684
Symbol
Conditions
VCE(sat) IC=(–)500mA, IB=(–)50mA
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
ton
tstg
IC=(–)500mA, IB=(–)50mA
IC=(–)10µA, IE=0
IC=(–)1mA, RBE=
IE=(–)10µA, IC=0
See specified Test Circuit
See specified Test Circuit
tf See specified Test Circuit
Switching Time Test Circuit
Ratings
min typ
(–180)
100
(–)0.85
(–)120
(–)100
(–)6
(80)80
1000
(750)
(40)50
max
(–500)
300
(–)1.2
Unit
mV
mV
V
V
V
V
ns
ns
ns
ns
No.2041–2/4

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2SB1144/2SD1684
No.2041–3/4