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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SD1187
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 80V(Min)
·Low Collector Saturation Voltage-
: VCE(sat)= 0.5V(Max.) @ IC= 6A
·High Power Dissipation
APPLICATIONS
·High power switching applications
·DC-DC converter and DC-AC inverter applications
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
100 V
VCEO
Collector-Emitter Voltage
80 V
VEBO
Emitter-Base Voltage
5V
IC Collector Current-Continuous 10 A
IBB Base Current-Continuous
PC
Collector Power Dissipation
@ TC=25
TJ Junction Temperature
Tstg Storage Temperature Range
2A
80 W
150
-55~150
isc Websitewww.iscsemi.cn
Free Datasheet http://www.datasheet4u.com/

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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SD1187
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA ; IB= 0
80
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 6A; IB=B 0.3A
VBE(sat) Base-Emitter Saturation Voltage
IC= 6A; IB=B 0.3A
ICBO Collector Cutoff Current
VCB= 100V; IE= 0
IEBO Emitter Cutoff Current
VEB= 5V; IC= 0
0.5 V
1.4 V
10 μA
10 μA
hFE-1
DC Current Gain
IC= 1A; VCE= 1V
70 240
hFE-2
DC Current Gain
IC= 6A; VCE= 1V
30
COB Output Capacitance
IE= 0; VCB= 10V; ftest= 1.0MHz
fT
Current-Gain—Bandwidth Product
IC= 1A; VCE= 4V
350 pF
10 MHz
Switching Times
ton Turn-on Time
tstg Storage Time
tf Fall Time
IB1= -IB2= 0.3A; RL= 5Ω;
VCC= 30V;
PW=20μs; Duty Cycle1%
0.5 μs
2.5 μs
0.8 μs
‹ hFE-1 Classifications
OY
70-140 120-240
isc Websitewww.iscsemi.cn
2
Free Datasheet http://www.datasheet4u.com/