F10N65.pdf 데이터시트 (총 6 페이지) - 파일 다운로드 F10N65 데이타시트 다운로드

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PJP10N65 / PJF10N65
650V N-Channel Enhancement Mode MOSFET
FEATURES
• 10A , 650V, RDS(ON)=1.0@VGS=10V, ID=5.0A
TO-220AB / ITO-220AB
TO-220AB
• Low ON Resistance
• Fast Switching
• Low Gate Charge
• Fully Characterized Avalanche Voltage and Current
• Specially Desigened for AC Adapter, Battery Charge and SMPS
• In compliance with EU RoHs 2002/95/EC Directives
3
2
S
1D
G
ITO-220AB
1
2
3
D
S
G
MECHANICAL DATA
• Case: TO-220AB / ITO-220AB Molded Plastic
• Terminals : Solderable per MIL-STD-750,Method 2026
INTERNAL SCHEMATIC DIAGRAM
2 Drain
ORDERING INFORMATION
TYPE
PJP10N65
MARKING
P10N65
PJF10N65
F10N65
PACKAGE
TO-220AB
ITO-220AB
PACKING
50PCS/TUBE
50PCS/TUBE
1
Gate
3 Source
Maximum RATINGS and Thermal Characteristics (TA=25OC unless otherwise noted )
PARAMETER
Symbol PJP10N65 PJF10N65
Drain-Source Voltage
VDS 650
Gate-Source Voltage
VGS +30
Continuous Drain Current
ID 10
10
Pulsed Drain Current 1)
Maximum Power Dissipation
Derating Factor
TA= 2 5 OC
IDM
PD
40
156
1.25
40
50
0.4
Op e ra ti ng Junc ti o n a nd S to r a g e Te mp e ra tur e Ra ng e
Avalanche Energy with Single Pulse
IAS=10A, VDD=90V, L=13mΗ
Junction-to-Case Thermal Resistance
TJ,TSTG
E AS
RθJC
-55 to +150
750
0.8 2.5
Junction-to Ambient Thermal Resistance
Note : 1. Maximum DC current limited by the package
RθJA
62.5
100
Uni ts
V
V
A
A
W
OC
mJ
OC /W
OC /W
PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE
STAD-DEC.25.2009
PAGE . 1

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PJP10N65 / PJF10N65
ELECTRICAL CHARACTERISTICS ( TA=25OC unless otherwise noted )
Parameter
Static
Symbol
Te s t C o nd i ti o n
Drain-Source Breakdown Voltag e
Gate Threshold Voltage
Drain-Source On-State
Resistance
Zero Gate Voltage Drain
C urre nt
Gate Body Leakage
Dynamic
B V DSS
V GS(th)
R D S ( o n)
I DSS
I GSS
VGS=0V, I D=250uA
VDS=VGS, I D=250uA
VGS= 10V, I D= 5.0A
VDS=650V, VGS=0V
VGS=+30V, VDS=0V
To ta l Ga te C ha rg e
Gate-Source Charge
Gate-Drain Charge
Turn-On D e la y Ti me
Turn-On Ri s e Ti me
Turn-Off D e la y Ti me
Turn-Off F a ll Ti me
Input Capacitance
Output Capacitance
Reverse Tra nsfer
C a p a c i ta nc e
Source-Drain Diode
Qg
Q gs
Q gd
t d(on)
tr
t d(off)
tf
C iss
C oss
C rss
V DS=520V, ID=10A ,
V GS= 1 0 V
VDD=325V, ID =10A
V GS=1 0 V, RG=25
VDS=25V, VGS=0V
f=1.0MHZ
Max. Diode Forward Current
IS
-
Max.Pulsed Source Current
I SM
-
Diode Forward Voltage
V SD
IS=10A , V GS=0V
Re ve rse Re co ve ry Ti me
Reverse Recovery Charge
t rr
Q rr
V GS=0V, IF=10A
d i /d t=1 0 0 A /us
NOTE : Plus Test : Pluse Width < 300us, Duty Cycle < 2%.
Mi n. Typ . Ma x. Uni ts
650 -
-V
2.0 - 4.0 V
- 0.85 1.0
- - 10 uA
- - +100 nΑ
-
38.6
52
- 8.4 - nC
- 9.8 -
- 14.8 22
- 22.6 36
ns
-
48.2
90
-
26.8
42
- 1450 2020
- 120 165 p F
- 12 16
- - 10 A
- - 40 A
- - 1.4 V
- 450 - ns
- 4.2 - uC
STAD-DEC.25.2009
PAGE . 2

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PJP10N65 / PJF10N65
Typical Characteristics Curves ( Ta=25, unless otherwise noted)
20
18
16
14
12
10
8
6
4
2
0
0
VGS= 20V~ 6.0V
5.0V
5 10 15 20 25 30
VDS - Drain-to-Source Voltage (V)
Fig.1 Output Characteristric
100
VDS =50V
10
TJ = 125oC
1
0.1
25oC
-55oC
0.01
1
2345678
VGS - Gate-to-Source Voltage (V)
Fig.2 Transfer Characteristric
2
1.6
1.2
VGS=10V
0.8
VGS = 20V
0.4
0
0 4 8 12 16 20
ID - Drain Current (A)
Fig.3 On Resistance vs Drain Current
4
3.5
3
2.5
2
1.5
1
0.5
0
3
ID =5.0A
TJ =25oC
456789
VGS - Gate-to-Source Voltage (V)
10
Fig.4 On Resistance vs Gate to Source Voltage
2.5
2.3 VGS =10 V
2.1 ID =5.0A
1.9
1.7
1.5
1.3
1.1
0.9
0.7
0.5
-50 -25 0 25 50 75 100 125 150
TJ - Junction Temperature (oC)
Fig.5 On Resistance vs Junction Temperature
STAD-DEC.25.2009
2500
2000
1500
Ciss
f = 1MHz
VGS = 0V
1000
500
Coss
Crss
0
0 5 10 15 20 25 30
VDS - Drain-to-Source Voltage (V)
Fig.6 Capacitance
PAGE. 3

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PJP10N65 / PJF10N65
Typical Characteristics Curves ( Ta=25, unless otherwise noted)
12
ID =10A
10
VDS=520V
8 VDS=325V
VDS=130V
6
4
2
0
0 4 8 12 16 20 24 28 32 36 40
Qg - Gate Charge (nC)
Fig. 7 Gate Charge Waveform
1.2
ID = 250µA
1.1
1
0.9
0.8
-50 -25 0 25 50 75 100 125 150
TJ - Junction Temperature (oC)
Fig.9 Breakdown Voltage vs Junction Temperature
100
VGS = 0V
10
TJ = 125oC
1
0.1
25oC
-55oC
0.01
0.2
0.4 0.6 0.8 1 1.2
VSD - Source-to-Drain Voltage (V)
1.4
Fig.8 Source-Drain Diode Forward Voltage
STAD-DEC.25.2009
PAGE. 4

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PJP10N65 / PJF10N65
LEGALSTATEMENT
Copyright PanJit International, Inc 2010
The information presented in this document is believed to be accurate and reliable. The specifications and information herein
are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit
does not convey any license under its patent rights or rights of others.
STAD-DEC.25.2009
PAGE . 5