D1190.pdf 데이터시트 (총 4 페이지) - 파일 다운로드 D1190 데이타시트 다운로드

No Preview Available !

Ordering number:924E
PNP/NPN Epitaxial Planar Silicon Darlington Tranasistors
2SB880/2SD1190
For Various Drivers Applications
Applications
· Motor drivers, printer hammer drivers, relay drivers,
voltage regulators.
Features
· High DC current gain.
· Large current capacity and wide ASO.
· Low saturation voltage.
Package Dimensions
unit:mm
2010C
[2SB880/2SD1190]
( ) : 2SB880
Specifications
JEDEC : TO-220AB
EIAJ : SC-46
1 : Base
2 : Collector
3 : Emitter
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Tc=25˚C
Conditions
Ratings
(–)70
(–)60
(–)6
(–)4
(–)6
1.75
30
150
–55 to +150
Unit
V
V
V
A
A
W
W
˚C
˚C
Electrical Characteristics at Ta = 25˚C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Symbol
Conditions
ICBO
IEBO
hFE
fT
VCE(sat)
VCB=(–)40V, IE=0
VEB=(–)5V, IC=0
VCE=(–)2V, IC=(–)2A
VCE=(–)5V, IC=(–)2A
IC=(–)2A, IB=(–)4mA
VBE(sat) IC=(–)2A, IB=(–)4mA
Ratings
min typ
2000
5000
20
0.9
(–)1.0
max
(–)0.1
(–)3.0
(–)1.5
(–)2.0
Unit
mA
mA
MHz
V
V
V
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
91098HA (KT)/D251MH/4027KI/2033KI, TS No.924–1/4

No Preview Available !

Parameter
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
2SB880/2SD1190
Symbol
Conditions
V(BR)CBO
V(BR)CEO
ton
IC=(–)5mA, IE=0
IC=(–)50mA, RBE=
See specified Test Circuit
tstg See specified Test Circuit
tf See specified Test Circuit
Switching Time Test Circuit
Electrical Connection
Ratings
min typ
(–)70
(–)60
(0.5)
0.6
(1.4)
2.7
(1.2)
1.6
max
Unit
V
V
µs
µs
µs
µs
µs
µs
Unit (Resistance : )
No.924–2/4

No Preview Available !

2SB880/2SD1190
No.924–3/4