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INCHANGE Semiconductor
isc Silicon PNP Power Transistor
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -60V(Min.)
·Low Collector Saturation Voltage
: VCE(sat)= -1.5V(Max)@IC= -2A
·Complement to Type 2SD1310
APPLICATIONS
·Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
-60 V
VCEO Collector-Emitter Voltage
-60 V
VEBO Emitter-Base Voltage
-7 V
IC Collector Current-Continuous
-3 A
ICM Collector Current-Peak
-5 A
IB Base Current-Continuous
PC
Total Power Dissipation
@ TC=25
TJ Junction Temperature
Tstg Storage Temperature Range
-0.6 A
30 W
150
-55~150
Product Specification
2SB1038
isc websitewww.iscsemi.cn
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INCHANGE Semiconductor
isc Silicon PNP Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= -2A; IB= -0.2A
VBE(sat) Base-Emitter Saturation Voltage
IC= -2A; IB= -0.2A
ICBO Collector Cutoff Current
VCB= -60V; IE= 0
IEBO Emitter Cutoff Current
VEB= -7V; IC= 0
hFE-1
DC Current Gain
IC= -50mA; VCE= -5V
hFE-2
DC Current Gain
IC= -0.5A; VCE= -5V
fT
Current-Gain—Bandwidth Product
IC= -0.1A; VCE= -5V
COB Output Capacitance
IE= 0; VCB= -10V; f= 1MHz
hFE-2 Classifications
MLK
40-80 60-120 100-200
Product Specification
2SB1038
MIN TYP. MAX UNIT
-60 V
-1.5 V
-2.0 V
-10 μA
-10 μA
20
40 200
20 MHz
70 pF
isc websitewww.iscsemi.cn
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