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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK1398
N-CHANNEL MOS FET
FOR HIGH SPEED SWITCHING
5 DESCRIPTION
The 2SK1398 is N-channel MOS Field Effect Transistor
designed for a high-speed switching device in digital circuits.
The 2SK1398 is driven by a 2.5-V power source, it is
suitable for applications including headphone stereos
which need power saving.
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK1398
SST
FEATURES
Directly driven by ICs having a 3-V power supply.
Not necessary to consider driving current because of its high input impedance.
Possible to reduce the number of parts by omitting the bias resistor.
Can be used complementary with the 2SJ184.
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS= 0 V)
VDSS
Gate to Source Voltage (VDS= 0 V)
VGSS
Drain Current (DC)
Drain Current (pulse) Note
ID(DC)
ID(pulse)
Total Power Dissipation
PT
Channel Temperature
Tch
Storage Temperature
Tstg
Note PW 10 ms, Duty cycle 50 %
50
±7.0
±100
±200
250
150
–55 to +150
V
V
mA
mA
mW
°C
°C
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D14772EJ2V0DS00 (2nd edition)
(Previous No. TC-2342)
Date Published March 2000 NS CP(K)
Printed in Japan
The mark 5 shows major revised points.
©
1991, 2000

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ELECTRICAL CHARACTERISTICS (TA = 25 °C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
Drain Cut-off Current
5 Gate Leakage Current
IDSS VDS = 50 V, VGS = 0 V
IGSS VGS = ±7.0 V, VDS = 0 V
Gate to Source Cut-off Voltage
VGS(off) VDS = 3.0 V, ID = 1.0 µA
Forward Transfer Admittance
| yfs | VDS = 3.0 V, ID = 10 mA
Drain to Source On-state Resistance
RDS(on)1 VGS = 2.5 V, ID = 10 mA
RDS(on)2 VGS = 4.0 V, ID = 10 mA
Input Capacitance
Ciss VDS = 3.0 V
Output Capacitance
Coss
VGS = 0 V
Reverse Transfer Capacitance
Crss f = 1 MHz
Turn-on Delay Time
td(on)
VDD = 3.0 V
Rise Time
tr ID = 20 mA
Turn-off Delay Time
td(off)
VGS(on) = 3.0 V
Fall Time
tf RG = 10 , RL = 150
TEST CIRCUIT SWITCHING TIME
D.U.T.
RG
PG. RG = 10
VGS
0
τ
τ = 1µ s
Duty Cycle 1 %
RL
VDD
VGS
VGS
Wave Form
010 %
VGS(on)
ID 90 %
ID
Wave Form
0 10 %
td(on)
ID
tr td(off)
90 %
90 %
10 %
tf
ton toff
2SK1398
MIN. TYP. MAX. UNIT
10 µA
±5.0 µA
0.9 1.2 1.5 V
20 38
mS
22 40
14 20
8 pF
7 pF
3 pF
15 ns
100 ns
30 ns
35 ns
2 Data Sheet D14772EJ2V0DS00

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TYPICAL CHARACTERISTICS (TA = 25 °C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
100
80
60
40
20
0 20 40 60 80 100 120 140 160
TC - Case Temperature - ˚C
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
100
Pulsed
80
60
5
40
VGS = 4.5 V
VGS = 4.0 V
VGS = 2.5 V
20
0 0.5 1.0 1.5 2.0
VDS - Drain to Source Voltage - V
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
2.0
VDS = 3.0 V
ID = 1.0 µA
1.5
1.0
0.5 0
50 100
Tch - Channel Temperature - ˚C
150
2SK1398
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
300
250
200
150
100
50
0 30 60 90 120 150 180
TA - Ambient Temperature - ˚C
FORWARD TRANSFER CHARACTERISTICS
100 Pulsed
10
TA = 150 ˚C
1 75 ˚C
25 ˚C
25 ˚C
0.1
0.01
0
VDS = 3.0 V
123 4 5 67
VGS - Gate to Source Voltage - V
1000
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
VDS = 5.0 V
f = 1 kHz
100
10
1 10 100 200
ID - Drain Current - mA
Data Sheet D14772EJ2V0DS00
3