MOS FIELD EFFECT TRANSISTOR
N-CHANNEL MOS FET
FOR HIGH SPEED SWITCHING
The 2SK1398 is N-channel MOS Field Effect Transistor
designed for a high-speed switching device in digital circuits.
The 2SK1398 is driven by a 2.5-V power source, it is
suitable for applications including headphone stereos
which need power saving.
• Directly driven by ICs having a 3-V power supply.
• Not necessary to consider driving current because of its high input impedance.
• Possible to reduce the number of parts by omitting the bias resistor.
• Can be used complementary with the 2SJ184.
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS= 0 V)
Gate to Source Voltage (VDS= 0 V)
Drain Current (DC)
Drain Current (pulse) Note
Total Power Dissipation
Note PW ≤ 10 ms, Duty cycle ≤ 50 %
–55 to +150
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D14772EJ2V0DS00 (2nd edition)
(Previous No. TC-2342)
Date Published March 2000 NS CP(K)
Printed in Japan
The mark 5 shows major revised points.