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FY4ADJ-03A
MITSUBISHI Pch POWER MOSFET
FY4ADJ-03A
HIGH-SPEED SWITCHING USE
OUTLINE DRAWING
“
Dimensions in mm
q 4V DRIVE
q VDSS ............................................................................... –30V
q rDS (ON) (MAX) ............................................................. 80m
q ID ......................................................................................... –4A
APPLICATION
Motor control, Lamp control, Solenoid control
DC-DC converter, etc.
Œ
5.0
1.8 MAX.
0.4
1.27
Œ
Œ Ž SOURCE
  GATE
 ‘ ’ “ DRAIN
Ž

’“
SOP-8
‘
MAXIMUM RATINGS (Tc = 25°C)
Symbol
VDSS
VGSS
ID
IDM
IDA
IS
ISM
PD
Tch
Tstg
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Avalanche drain current (Pulsed)
Source current
Source current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Weight
VGS = 0V
VDS = 0V
L = 10µH
Typical value
Conditions
Ratings
–30
±20
–4
–28
–4
–1.7
–6.8
1.6
–55 ~ +150
–55 ~ +150
0.07
Unit
V
V
A
A
A
A
A
W
°C
°C
g
Sep.1998

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MITSUBISHI Pch POWER MOSFET
FY4ADJ-03A
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Symbol
Parameter
Test conditions
V (BR) DSS
IGSS
IDSS
VGS (th)
rDS (ON)
rDS (ON)
VDS (ON)
yfs
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
VSD
Rth (ch-a)
trr
Drain-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Reverse recovery time
ID = –1mA, VGS = 0V
VGS = ±20V, VDS = 0V
VDS = –30V, VGS = 0V
ID = –1mA, VDS = 10V
ID = –4A, VGS = –10V
ID = –2A, VGS = –4V
ID = –4A, VGS = –10V
ID = –4A, VDS = –10V
VDS = –10V, VGS = 0V, f = 1MHz
VDD = –15V, ID = –2A, VGS = –10V, RGEN = RGS = 50
IS = –1.7A, VGS = 0V
Channel to ambient
IS = –1.7A, dis/dt = 50A/µs
Min.
–30
–1.5
Limits
Typ.
–2.0
60
115
–0.24
6
680
180
90
10
15
50
30
–0.88
70
Max.
±0.1
–0.1
–2.5
80
180
–0.32
–1.20
78.1
Unit
V
µA
mA
V
m
m
V
S
pF
pF
pF
ns
ns
ns
ns
V
°C/W
ns
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE
2.0
1.6
1.2
0.8
0.4
0
0 50 100 150 200
MAXIMUM SAFE OPERATING AREA
–3
–2
–101
–7
–5
–3
–2
tw = 100µs
1ms
–100
–7
–5
–3
–2
10ms
100ms
–10–1
–7 TC = 25°C
–5 Single Pulse
DC
–3
–2 –3
–5–7–100
–2 –3
–5–7–101 –2 –3
–5–7–102
–2
CASE TEMPERATURE TC (°C)
DRAIN-SOURCE VOLTAGE VDS (V)
OUTPUT CHARACTERISTICS
(TYPICAL)
–20
VGS = –10V –8V –6V
–5V
–16
OUTPUT CHARACTERISTICS
(TYPICAL)
–10
VGS = –10V –8V –6V –5V
–8 –4V
–12
–4V
–8
TC = 25°C
Pulse Test
–4
–3V
PD = 1.6W
0
0 –0.4 –0.8 –1.2 –1.6 –2.0
DRAIN-SOURCE VOLTAGE VDS (V)
–6
TC = 25°C
Pulse Test
–4
–3V
–2
PD = 1.6W
0
0 –0.2 –0.4 –0.6 –0.8 –1.0
DRAIN-SOURCE VOLTAGE VDS (V)
Sep.1998

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ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
–2.0
TC = 25°C
Pulse Test
–1.6
–1.2
–0.8
–0.4
0
0
ID = –8A
–4A
–2A
–2 –4 –6 –8 –10
GATE-SOURCE VOLTAGE VGS (V)
TRANSFER CHARACTERISTICS
(TYPICAL)
–20
TC = 25°C
VDS = –10V
Pulse Test
–16
–12
–8
–4
0
0 –2 –4 –6 –8 –10
GATE-SOURCE VOLTAGE VGS (V)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
103
Ciss
7
5
4
3
Coss
2
102
7
5
4
3
2 TCh = 25°C
f = 1MHZ
101 VGS = 0V
–10–1 –2 –3 –4 –5 –7–100
Crss
–2 –3 –4 –5 –7–101
DRAIN-SOURCE VOLTAGE VDS (V)
MITSUBISHI Pch POWER MOSFET
FY4ADJ-03A
HIGH-SPEED SWITCHING USE
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
200
TC = 25°C
Pulse Test
VGS = –4V
160
120
80
–10V
40
0
–10–1 –2 –3 –5–7 –100 –2 –3 –5–7–101 –2 –3 –5–7 –102
DRAIN CURRENT ID (A)
FORWARD TRANSFER ADMITTANCE
VS. DRAIN CURRENT
(TYPICAL)
102
VDS = –10V
7 Pulse Test
5
4
3
2 TC = 25°C
75°C
101 125°C
7
5
4
3
2
10–0100 –2 –3 –4 –5 –7–101 –2 –3 –4 –5 –7–102
DRAIN CURRENT ID (A)
SWITCHING CHARACTERISTICS
(TYPICAL)
102
7
td(off)
5
4
3 tf
2
td(on)
101
7
5 tr
4
3 TCh = 25°C
2 VDD = –15V
VGS = –10V
100 RGEN = RGS = 50
–10–1 –2 –3 –4 –5 –7–100
–2 –3 –4 –5 –7–101
DRAIN CURRENT ID (A)
Sep.1998

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GATE-SOURCE VOLTAGE
VS. GATE CHARGE
(TYPICAL)
–10
TCh = 25°C
ID = –4A
–8
VDS = –10V
–20V
–6 –25V
–4
–2
0
0 4 8 12 16 20
GATE CHARGE Qg (nC)
MITSUBISHI Pch POWER MOSFET
FY4ADJ-03A
HIGH-SPEED SWITCHING USE
SOURCE-DRAIN DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
–20
VGS = 0V
Pulse Test
–16
TC = 125°C
–12 75°C
25°C
–8
–4
0
0 –0.4 –0.8 –1.2 –1.6 –2.0
SOURCE-DRAIN VOLTAGE VSD (V)
ON-STATE RESISTANCE VS.
CHANNEL TEMPERATURE
(TYPICAL)
101
VGS = –10V
7 ID = –4A
5 Pulse Test
3
2
100
7
5
3
2
10–1
–50
0
50 100 150
CHANNEL TEMPERATURE Tch (°C)
THRESHOLD VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
–4.0
VDS = –10V
ID = –1mA
–3.2
–2.4
–1.6
–0.8
0
–50
0
50 100 150
CHANNEL TEMPERATURE Tch (°C)
BREAKDOWN VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
1.4
VGS = 0V
ID = –1mA
1.2
1.0
0.8
0.6
0.4
–50
0
50 100 150
CHANNEL TEMPERATURE Tch (°C)
102
7
5
D = 1.0
3 0.5
2
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
101 0.2
7
5
0.1
3
2
PDM
100 0.05
7
5
0.02
0.01
3 Single Pulse
2
tw
T
D= tw
T
10–1
10–42 3 5 710–32 3 5 710–22 3 5 710–12 3 5 7100 2 3 5 7101 2 3 5 7102 2 3 5 7103
PULSE WIDTH tw (s)
Sep.1998