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FY8ABJ-03
MITSUBISHI Pch POWER MOSFET
FY8ABJ-03
HIGH-SPEED SWITCHING USE
OUTLINE DRAWING
“
Dimensions in mm
q 4V DRIVE
q VDSS ............................................................................... –30V
q rDS (ON) (MAX) ............................................................. 20m
q ID ......................................................................................... –8A
APPLICATION
Motor control, Lamp control, Solenoid control
DC-DC converter, etc.
Œ
5.0
1.8 MAX.
0.4
1.27
ŒŽ

Œ  Ž SOURCE
 GATE
 ‘ ’ “ DRAIN
‘’“
SOP-8
MAXIMUM RATINGS (Tc = 25°C)
Symbol
VDSS
VGSS
ID
IDM
IDA
IS
ISM
PD
Tch
Tstg
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Avalanche drain current (Pulsed)
Source current
Source current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Weight
VGS = 0V
VDS = 0V
L = 10µH
Typical value
Conditions
Ratings
–30
±20
–8
–56
–8
–2.1
–8.4
2.0
–55 ~ +150
–55 ~ +150
0.07
Unit
V
V
A
A
A
A
A
W
°C
°C
g
Sep.1998

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MITSUBISHI Pch POWER MOSFET
FY8ABJ-03
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Symbol
Parameter
Test conditions
V (BR) DSS
IGSS
IDSS
VGS (th)
rDS (ON)
rDS (ON)
VDS (ON)
yfs
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
VSD
Rth (ch-a)
trr
Drain-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Reverse recovery time
ID = –1mA, VGS = 0V
VGS = ±20V, VDS = 0V
VDS = –30V, VGS = 0V
ID = –1mA, VDS = –10V
ID = –8A, VGS = –10V
ID = –4A, VGS = –4V
ID = –8A, VGS = –10V
ID = –8A, VDS = –10V
VDS = –10V, VGS = 0V, f = 1MHz
VDD = –15V, ID = –4A, VGS = –10V, RGEN = RGS = 50
IS = –2.1A, VGS = 0V
Channel to ambient
IS = –2.1A, dis/dt = 50A/µs
Min.
–30
–1.5
Limits
Typ.
–2.0
14
26
0.112
19
3650
900
385
30
55
250
105
–0.77
100
Max.
±0.1
–0.1
–2.5
20
37
0.160
–1.20
62.5
Unit
V
µA
mA
V
m
m
V
S
pF
pF
pF
ns
ns
ns
ns
V
°C/W
ns
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE
2.5
2.0
1.5
1.0
0.5
0
0 50 100 150 200
MAXIMUM SAFE OPERATING AREA
–102
–7
–5
–3
–2
–101
–7
–5
–3
–2
tw =
1ms
10ms
–100
–7
–5
–3
–2
–10–1
–7
–5
–3
–2
Tc = 25°C
Single Pulse
100ms
DC
–10–2–10–2 –2–3 –5–7–10–1–2–3 –5–7–100 –2–3 –5–7–101–2–3 –5–7–102
CASE TEMPERATURE TC (°C)
DRAIN-SOURCE VOLTAGE VDS (V)
OUTPUT CHARACTERISTICS
(TYPICAL)
–50
VGS = –10V
–6V –5V
–40 –8V
–4V
–30
Tc = 25°C
Pulse Test
–20
–3V
–10
PD = 2W
0
0 –0.4 –0.8 –1.2 –1.6 –2.0
DRAIN-SOURCE VOLTAGE VDS (V)
OUTPUT CHARACTERISTICS
(TYPICAL)
–20
VGS =
–10V
–16
Tc = 25°C
–4V Pulse Test
–5V
–6V –3V
–8V
–12
–8
–2.5V
–4
PD = 2W
0
0 –0.4 –0.8 –1.2 –1.6 –2.0
DRAIN-SOURCE VOLTAGE VDS (V)
Sep.1998

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–2.0
–1.6
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
Tc = 25°C
Pulse Test
–1.2
–0.8
–0.4
0
0
ID = –32A
–24A
–16A
–8A
–2 –4 –6 –8 –10
GATE-SOURCE VOLTAGE VGS (V)
TRANSFER CHARACTERISTICS
(TYPICAL)
–40
–32
Tc = 25°C
VDS = –10V
Pulse Test
–24
–16
–8
0
0 –2 –4 –6 –8 –10
GATE-SOURCE VOLTAGE VGS (V)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
2
Tch = 25°C
104
VGS = 0V
f = 1MHZ
7
5 Ciss
3
2
103 Coss
7
5 Crss
3
2–5–7–10–1 –2 –3 –5–7 –100 –2 –3 –5–7 –101 –2 –3
DRAIN-SOURCE VOLTAGE VDS (V)
MITSUBISHI Pch POWER MOSFET
FY8ABJ-03
HIGH-SPEED SWITCHING USE
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
40
Tc = 25°C
Pulse Test
VGS = –4V
32
24
16
–10V
8
0
–10–1 –2 –3 –5–7–100 –2 –3 –5–7–101 –2 –3 –5
DRAIN CURRENT ID (A)
FORWARD TRANSFER ADMITTANCE
VS. DRAIN CURRENT
(TYPICAL)
102
7
5 Tc =25°C 75°C 125°C
3
2
101
7
5 VDS = –10V
Pulse Test
3
2
100
–5
–7–100
–2 –3 –5 –7–101
–2 –3 –5
DRAIN CURRENT ID (A)
SWITCHING CHARACTERISTICS
(TYPICAL)
103
Tch = 25°C
7 VDD = –15V
5 VGS = –10V
td(off)
RGEN = RGS = 50
3
2
tf
102
7 tr
5
3 td(on)
2
101
–10–1 –2 –3 –5 –7–100 –2 –3 –5 –7–101
DRAIN CURRENT ID (A)
Sep.1998

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GATE-SOURCE VOLTAGE
VS. GATE CHARGE
(TYPICAL)
–10
Tch = 25°C
ID = –8A
–8 VDS =
–25V
–6 –20V
–10V
–4
–2
0
0 20 40 60 80 100
GATE CHARGE Qg (nC)
MITSUBISHI Pch POWER MOSFET
FY8ABJ-03
HIGH-SPEED SWITCHING USE
SOURCE-DRAIN DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
–40
VGS = 0V
Pulse Test
–32
Tc = 25°C
75°C
–24 125°C
–16
–8
0
0 –0.4 –0.8 –1.2 –1.6 –2.0
SOURCE-DRAIN VOLTAGE VSD (V)
ON-STATE RESISTANCE VS.
CHANNEL TEMPERATURE
(TYPICAL)
101
7 VGS = –10V
ID = –8A
5 Pulse Test
3
2
100
7
5
3
2
10–1
–50
0
50 100 150
CHANNEL TEMPERATURE Tch (°C)
–2.0
–1.6
THRESHOLD VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
VDS = –10V
ID = –1mA
–1.2
–0.8
–0.4
0
–50
0
50 100 150
CHANNEL TEMPERATURE Tch (°C)
BREAKDOWN VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
1.4
VGS = 0V
ID = –1mA
1.2
1.0
0.8
0.6
0.4
–50
0
50 100 150
CHANNEL TEMPERATURE Tch (°C)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
102
7
5 D = 1.0
3
2 0.5
101
7
5
3
2
100
7
5
3
2
10–1
7
5
3
2
0.2
0.1
0.05
0.02
0.01
Single Pulse
PDM
tw
T
D= tw
T
10–2
10–4 2 3 5710–3 23 5710–223 5710–12 3 57100 2 3 57101 2 3 57102 2 3 57103
PULSE WIDTH tw (s)
Sep.1998