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RLT9820G
TECHNICAL DATA
High Power Infrared Laserdiode
Structure: GaAlAs double heterostructure
Lasing wavelength: 980 nm typ.
Max. optical power: 20 mW, multimode
Package: 9 mm
PIN CONNECTION:
1) Laser diode cathode
2) Laser diode anode and photodiode cathode
3) Photodiode anode
NOTE!
LASERDIODE
MUST BE COOLED!
Maximum Ratings (Tc=25°C)
CHARACTERISTIC
SYMBOL
Optical Output Power
LD Reverse Voltage
PD Reverse Voltage
Operating Temperature
Storage Temperature
Po
VR(LD)
VR(PD)
TC
TSTG
RATING
25
1.5
6
-10 .. +50
-40 .. +85
UNIT
mW
V
V
°C
°C
Optical-Electrical Characteristics (Tc = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION
Optical Output Power
Threshold Current
Operation Current
Lasing Aperture
Po
Ith
Iop
A
cw
cw
Po = 20 mW
Lasing Wavelength
Beam Divergence
Beam Divergence
Differential Efficiency
Monitor Current
λp
θ//
θ
dPo/dIop
Im
Po = 20 mW
Po = 20 mW
Po = 20 mW
Po = 20 mW
Po = 20 mW
MIN TYP MAX
20
25 30
60 75 100
1x15
970 980 990
20 25
45 50
0.4 0.7 1.0
150 350 1200
UNIT
mW
mA
mA
µm²
nm
°
°
mW/mA
µA
10.08.2010
rlt9820g.doc
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