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Li-ION/POLYMER 1CELL PROTECTOR
R5475N/R5478N SERIES
No. EA-291-121009
OUTLINE
The R5475N/R5478Nxxxxx Series are high voltage CMOS-based protection ICs for over-charge/discharge of
rechargeable one-cell Lithium-ion (Li+) / Lithium polymer excess load current, further include a short circuit
protector for preventing large external short circuit current and Excess discharge-current.
Each of these ICs is composed of three voltage detectors, a reference unit, a delay circuit, a short circuit
protector, an oscillator, a counter, and a logic circuit. When the over-charge voltage crosses the detector
threshold from a low value to a high value, the output of COUT pin switches to low level after internal fixed delay
time. The conditions to release over-charge detector are different by mask options. In terms of so called “Latch
function” version, after detecting over-charge, the detector can be reset and the output of COUT becomes "H"
when a kind of load is connected to VDD after a charger is disconnected from the battery pack, and the cell
voltage becomes lower than over-charge detector threshold. If a charger is continue to be connected to the
battery pack, even the cell voltage becomes lower than over-charge detector threshold, over-charge state is not
released. On the other hand, in terms of so called, “ Released by voltage level” version, after detecting
over-charge, when the cell voltage reaches the released voltage from over-charge, the output of COUT becomes
“H”
The output of DOUT pin, the output of Over-discharge detector and Excess discharge-current detector,
switches to “L” level after internally fixed delay time, when discharged voltage crosses the detector threshold
from a high value to a value lower than VDET2.
The conditions to release over-discharge detector are also different by mask options. In terms of so called
“Latch function” version, after detecting over-discharge voltage, connect a charger to the battery pack, and
when the battery supply voltage becomes higher than over-discharge detector threshold, VD2 is released and
the voltage of DOUT pin becomes "H" level. On the other hand, in terms of so called “Released by voltage level”
version, in case that the charger is not connected, when the cell voltage becomes equal released voltage from
over-discharge, over-discharge detector is released. In case that a charger is connected, and when the cell
voltage becomes the released voltage from over-discharge, the over-discharge detector is released.
An excess discharge-current and short circuit state can be sensed and cut off through the built in excess
current detector, VD3, with DOUT being enabled to low level. Once after detecting excess discharge-current or
short circuit, the VD3 is released and DOUT level switches to high by detaching a battery pack from a load
system.
After detecting over-discharge, supply current will be kept extremely low by halting internal circuits' op-
eration.
When the output of COUT is “H”, if V- pin level is set at Vss-2V, the delay time of detector can be shortened.
Especially, the delay time of over-charge detector can be reduced into approximately 1/57. Therefore, testing
time of protector circuit board can be reduced. Output type of COUT and DOUT are CMOS. 6-pin, SOT-23-6 is
available.
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R5475N/R5478Nxxxxx
FEATURES
Manufactured with High Voltage Tolerant Process ...Absolute Maximum Rating
Low supply current ..................................Supply current (At normal mode)
C version: (detecting over-discharge)
3V
Typ. .0µA
Max. 0.1µA
D/J/K version: (detecting over-discharge) Typ. 1.2μA/Max. 2.0μA
High accuracy detector threshold .............Over-charge detector (Topt=25°C)
±25mV
(Topt=-5 to 55°C)
±30mV
Over-discharge detector
±2.5%
Excess discharge-current detector
±15mV
Variety of detector threshold ...................Over-charge detector threshold
C/D version:
4.2V-4.5V step of 0.005V
J version:
3.65V
K version:
3.90V
Over-discharge detector threshold
C/D/J version:
2.1V-3.0V step of 0.100V
K version:
1.9V-3.0V step of 0.100V
Excess discharge-current threshold
0.05V-0.20V step of 0.005V
Short Detector Threshold
Fixed at 0.75V
Internal fixed Output delay time...............Over-charge detector Output Delay
(Select among the options)
Over-discharge detector Output Delay
1s
20ms
Excess discharge-current detector Output Delay 12ms(C Type) / 6ms(E Type)
Short Circuit detector Output Delay
300µs(C Type) / 200µs(E Type)
Output Delay Time Shortening Function..At COUT is “H”, if V- level is set at –2V, the Output Delay time of
all items except short-circuit can be reduced. (Delay Time for
over-charge becomes about 1/57 of normal state.)
Conditions for release over-charge detector
With Latch function (C version)
With Released voltage (D/J/K version)
Conditions for Release over-discharge detector
................................................................
Latch Type: (C version)
Released Voltage (D/J/K version)
Ultra Small package .................................SOT-23-5(R5475N) , SOT-23-6(R5478N)
APPLICATIONS
Li+ / Li Polymer protector of over-charge, over-discharge, excess-current for battery pack
High precision protectors for cell-phones and any other gadgets using on board Li+ / Li Polymer battery
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R5475N/R5478Nxxxxx
BLOCK DIAGRAMS
C version
VD D
scillator
VD1
VD2
Counter
Logic
Circuit
Delay
Logic
Circuit
DS Circuit
Level
Shift
Short
Detector
VD3
VSS
DOUT COUT
V-
D/J/K version
VD D
VD1
VD2
scillator
Counter
Logic
Circuit
Delay
Logic
Circuit
DS Circuit
Level
Shift
Short
Detector
VD3
VSS
DOUT COUT
V-
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R5475N/R5478Nxxxxx
SELECTION GUIDE
In the R5475/R5478xxxxx Series, three of the input threshold for over-charge, over-discharge, and excess
discharge current detectors can be designated.
Part Number is designated as follows:
R547xN xxx x x-xx
↑ ↑ ↑↑ ↑
a b cd e
Part Number
Code
a
b
c
d
e
Contents
Package Type R5475N: SOT-23-5 , R5478N: SOT-23-6
Serial Number for the R5475/R5478 Series designating input four threshold for
over-charge, over-discharge, and excess discharge-current detectors.
Designation of Output delay option of over-charge, and excess dis-
charge-current.
Designation of version symbols
C version: With Latch function after Over-charge and Over-discharge
D version: Released by voltage level from Over-charge and Over-discharge
J version: Released by voltage level from Over-charge and Over-discharge
Over-charge level = 3.65V Only
K version: Released by voltage level from Over-charge and Over-discharge
Over-charge level = 3.90V Only
Taping Type: TR (refer to Taping Specification)
PIN CONFIGURATIONS
SOT-23-5 (R5475N)
54
SOT-23-6 (R5478N)
654
123
123
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R5475N/R5478Nxxxxx
PIN DESCRIPTION
Pin No.
SOT23-5
4
1
5
2
3
SOT23-6
1
2
3
4
5
6
Symbol
DOUT
V-
COUT
NC
VDD
VSS
Description
Output of over-discharge detection, CMOS output
Pin for charger negative input
Output of over-charge detection, CMOS output
No Connection
Power supply pin, the substrate voltage level of the IC.
Vss pin. Ground pin for the IC
ABSOLUTE MAXIMUM RATINGS
Symbol
VDD
V-
VCOUT
VDOUT
PD
Topt
Tstg
Item
Supply voltage
Input Voltage
V- pin
Output voltage
COUT pin
DOUT pin
Power dissipation
Operating temperature range
Storage temperature range
Ratings
-0.3 to 12
VDD -30 to VDD +0.3
VDD -30 to VDD +0.3
VSS -0.3 to VDD +0.3
150
-40 to 85
-55 to 125
VSS=0V
Unit
V
V
V
V
mW
°C
°C
*Note: Exposure to the condition exceeded Absolute Maximum Ratings may cause the permanent
damages and affects the reliability and safety of both device and systems using the device.
The functional operations cannot be guaranteed beyond specified values in the Recommended conditions.
ABSOLUTE MAXIMUM RATINGS
Electronic and mechanical stress momentarily exceeded absolute maximum ratings may cause the per-
manent damages and may degrade the life time and safety for both device and system using the device in
the field. The functional operation at or over these absolute maximum ratings is not assured.
RECOMMENDED OPERATING CONDITIONS (ELECTRICAL CHARACTERISTICS)
All of electronic equipment should be designed that the mounted semiconductor devices operate
within the recommended operating conditions. The semiconductor devices cannot operate normally
over the recommended operating conditions, even if when they are used over such conditions by
momentary electronic noise or surge. And the semiconductor devices may receive serious damage
when they continue to operate over the recommended operating conditions.
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