D1304.pdf 데이터시트 (총 2 페이지) - 파일 다운로드 D1304 데이타시트 다운로드

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Transistor
2SD1304
Silicon NPN epitaxial planer type
For low-frequency amplification
s Features
q Zener diode built in.
q Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
Ratings
20±3
20±3
7
200
100
200
150
–55 ~ +150
Unit
V
V
V
mA
mA
mW
˚C
˚C
Unit: mm
0.65±0.15
+0.2
2.8 –0.3
+0.25
1.5 –0.05
0.65±0.15
1
3
2
0.1 to 0.3
0.4±0.2
1:Base
2:Emitter
3:Collector
JEDEC:TO–236
EIAJ:SC–59
Mini Type Package
Marking symbol : 2A
Internal Connection
C
B
s Electrical Characteristics (Ta=25˚C)
Parameter
Collector cutoff current
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Symbol
ICBO
VCEO
VEBO
hFE1*
hFE2
VCE(sat)
fT
Conditions
VCB = 10V, IE = 0
IC = 1mA, IB = 0
IE = 10µA, IC = 0
VCE = 10V, IC = 2mA
VCE = 2V, IC = 100mA
IC = 100mA, IB = 10mA
VCB = 10V, IE = –2mA, f = 200MHz
min
17
7
160
90
E
typ max Unit
0.1 µA
23 V
V
460
0.5 V
150 MHz
*hFE1 Rank classification
Rank
Q
hFE1
Marking Symbol
160 ~ 260
2AQ
R
210 ~ 340
2AR
S
290 ~ 460
2AS
1

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Transistor
PC — Ta
240
200
160
120
80
40
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
VCE(sat) — IC
100
IC/IB=10
30
10
3
1
0.3
Ta=75˚C
0.1
25˚C
0.03 –25˚C
0.01
0.1 0.3 1 3 10 30 100
Collector current IC (mA)
Cob — VCB
12
IE=0
f=1MHz
Ta=25˚C
10
8
6
4
2
0
1 3 10 30 100
Collector to base voltage VCB (V)
IC — VCE
120
Ta=25˚C
100 IB=300µA
250µA
80
200µA
60 160µA
120µA
40
80µA
20 40µA
0
0 2 4 6 8 10 12
Collector to emitter voltage VCE (V)
hFE — IC
600
VCE=10V
500
400 Ta=75˚C
25˚C
300 –25˚C
200
100
0
0.1 0.3 1 3 10 30 100
Collector current IC (mA)
2SD1304
IC — VBE
120
25˚C
VCE=10V
100
Ta=75˚C –25˚C
80
60
40
20
0
0 0.4 0.8 1.2 1.6 2.0
Base to emitter voltage VBE (V)
fT — IE
300
VCB=10V
Ta=25˚C
250
200
150
100
50
0
– 0.1 – 0.3 –1 –3 –10 –30 –100
Emitter current IE (mA)
2