F12N65.pdf 데이터시트 (총 6 페이지) - 파일 다운로드 F12N65 데이타시트 다운로드

No Preview Available !

PJP12N65 / PJF12N65
650V N-Channel Enhancement Mode MOSFET
FEATURES
• 12A , 650V, RDS(ON)=0.8@VGS=10V, ID=6.0A
TO-220AB / ITO-220AB
TO-220AB
• Low ON Resistance
• Fast Switching
• Low Gate Charge
• Fully Characterized Avalanche Voltage and Current
• Specially Desigened for AC Adapter, Battery Charge and SMPS
• In compliance with EU RoHs 2002/95/EC Directives
1
2
3
D
S
G
ITO-220AB
1
2
3
D
S
G
MECHANICAL DATA
• Case: TO-220AB / ITO-220AB Molded Plastic
• Terminals : Solderable per MIL-STD-750,Method 2026
INTERNAL SCHEMATIC DIAGRAM
ORDERING INFORMATION
TYPE
PJP12N65
PJF12N65
MARKING
P12N65
F12N65
PACKAGE
TO-220AB
ITO-220AB
PACKING
50PCS/TUBE
50PCS/TUBE
2 Drain
1
Gate
3 Source
Maximum RATINGS and Thermal Characteristics (TA=25OC unless otherwise noted )
PA RA ME TE R
Symbol PJP12N65 PJF12N65
Drain-Source Voltage
VDS 650
Gate-Source Voltage
VGS +30
Continuous Drain Current
ID 1 2
12
Pulsed Drain Current 1)
Maximum Power Dissipation
Derating Factor
TA= 2 5 OC
IDM
PD
48
175
1.4
48
52
0.42
Op e ra ti ng J uncti o n a nd S to ra g e Te mp e r a ture Ra ng e
Avalanche Energy with Single Pulse
IAS=12A, VDD=90V, L=12mΗ
Junction-to-Case Thermal Resistance
TJ,TSTG
E AS
RθJC
-55 to +150
990
0.7 2.4
Junction-to Ambient Thermal Resistance
RθJA
62.5
100
Note : 1. Maximum DC current limited by the package
Uni ts
V
V
A
A
W
OC
mJ
OC /W
OC /W
PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE
STAD-DEC.25.2009
PAGE . 1

No Preview Available !

PJP12N65 / PJF12N65
ELECTRICAL CHARACTERISTICS ( TA=25OC unless otherwise noted )
Parameter
Static
Symbol
Te s t C o nd i ti o n
Drain-Source Breakdown Voltag e
Gate Threshold Voltage
Drain-Source On-State
Resistance
Zero Gate Voltage Drain
C urre nt
Gate Body Leakage
Dynamic
B V DSS
V GS(th)
R D S ( o n)
I DSS
I GSS
VGS=0V, I D=250uA
VDS=VGS, I D=250uA
VGS= 10V, I D= 6.0A
VDS=650V, VGS=0V
VGS=+30V, VDS=0V
To ta l Ga te C ha rg e
Gate-Source Charge
Gate-Drain Charge
Turn-On D e la y Ti me
Turn-On Ri s e Ti me
Turn-Off D e la y Ti me
Turn-Off F a ll Ti me
Input Capacitance
Output Capacitance
Reverse Tra nsfer
C a p a c i ta nc e
Source-Drain Diode
Qg
Q gs
Q gd
t d(on)
tr
t d(off)
tf
C iss
C oss
C rss
V DS=520V, ID=12A ,
V GS= 1 0 V
VDD=325V, ID =12A
V GS=1 0 V, RG=25
VDS=25V, VGS=0V
f=1.0MHZ
Max. Diode Forward Current
IS
-
Max.Pulsed Source Current
I SM
-
Diode Forward Voltage
V SD
IS=12A , V GS=0V
Re ve rse Re co ve ry Ti me
Reverse Recovery Charge
t rr
Q rr
V GS=0V, IF=12A
d i /d t=1 0 0 A /us
NOTE : Plus Test : Pluse Width < 300us, Duty Cycle < 2%.
Mi n. Typ . Ma x. Uni ts
650 -
-
2.0 - 4.0
- 0.66 0.8
V
V
- - 10 uA
- - +100 nΑ
-
46.8
62
- 9.2 - nC
- 14.6 -
- 16.2 24
- 26.8 42
ns
- 56 98
-
24.6
38
- 1800 2450
- 145 195 p F
- 16 22
- - 12 A
- - 48 A
- - 1.4 V
- 450 - ns
- 5.0 - uC
STAD-DEC.25.2009
PAGE . 2

No Preview Available !

PJP12N65 / PJF12N65
Typical Characteristics Curves ( Ta=25, unless otherwise noted)
24
20 VGS= 20V~ 6.0V
16
12 5.0V
8
4
0
0 5 10 15 20 25 30
VDS - Drain-to-Source Voltage (V)
Fig.1 Output Characteristric
100
VDS =50V
10
TJ = 125oC
1
25oC
-55oC
0.1
1
234567
VGS - Gate-to-Source Voltage (V)
Fig.2 Transfer Characteristric
8
1.5
1.2
0.9
VGS=10V
0.6
VGS = 20V
0.3
0
0 2 4 6 8 10 12 14 16 18 20
ID - Drain Current (A)
Fig.3 On Resistance vs Drain Current
3
2.5 ID =6.0A
2
1.5
1 TJ =25oC
0.5
0
3 4 5 6 7 8 9 10
VGS - Gate-to-Source Voltage (V)
Fig.4 On Resistance vs Gate to Source Voltage
2.5
2.3 VGS =10 V
2.1 ID =6.0A
1.9
1.7
1.5
1.3
1.1
0.9
0.7
0.5
-50 -25 0 25 50 75 100 125 150
TJ - Junction Temperature (oC)
Fig.5 On Resistance vs Junction Temperature
STAD-DEC.25.2009
3000
2500
2000
Ciss
f = 1MHz
VGS = 0V
1500
1000
500
Coss
0 Crss
0 5 10 15 20 25 30
VDS - Drain-to-Source Voltage (V)
Fig.6 Capacitance
PAGE. 3