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Technical Data : CD-069
Page 1 of 3
RAE
YC448 - Power Thyristor
600 - 1400 VDRM; 1000A rms
**********************************************************************************************************
HIGH POWER THYRISTOR FOR INVERTER APPLICATIONS
Features:
. All Diffused Structure
. Interdigitated Amplifying Gate Configuration
. Blocking capabilty up to 1400 volts
. Guaranteed Maximum Turn-Off Time
. High dV/dt Capability
. Pressure Assembled Device
CASE 3T
ELECTRICAL CHARACTERISTICS AND RATINGS
Blocking - Off State
Device Type VRRM (1) VDRM (1) VRSM (1)
YC448M
YC448N
YC448 P
YC448PB
YC448PD
600
800
1000
1200
1400
600
800
1000
1200
1400
720
960
1150
1300
1500
VRRM = Repetitive peak reverse voltage
VDRM = Repetitive peak off state voltage
VRSM = Non repetitive peak reverse voltage (2)
Repetitive peak reverse
IRRM / IDRM
15 mA
leakage and off state leakage
35 mA (3)
Critical rate of voltage rise dV/dt (4)
500 V/μsec
Conducting - on state
Parameter
Average value of on-state current
RMS value of on-state current
Peak one cycle surge
(non repetitive) current
I square t
Latching current
Holding current
Peak on-state voltage
Critical rate of rise of on-state
current (5, 6)
Critical rate of rise of on-state
current (6)
Symbol
IT(AV)
ITRMS
Min.
ITSM
I2t
IL
IH
VTM
di/dt
di/dt
Max. Typ.
625
1000
10000
9100
415000
400
400
2.9
800
400
Notes:
All ratings are specified for Tj=25 oC unless
otherwise stated.
(1) All voltage ratings are specified for an applied
50Hz/60zHz sinusoidal waveform over the
temperature range -40 to +125 oC.
(2) 10 msec. max. pulse width
(3) Maximum value for Tj = 125 oC.
(4) Minimum value for linear and exponential
waveshape to 80% rated VDRM. Gate open.
Tj = 125 oC.
(5) Non-repetitive value.
(6) The value of di/dt is established in accordance
with EIA/NIMA Standard RS-397, Section
5-2-2-6. The value defined would be in addi-
tion to that obtained from a snubber circuit,
comprising a 0.2 μF capacitor and 20 ohms
resistance in parallel with the thristor under
test.
Units
A
A
Conditions
Sinewave,180o conduction,Tc=65oC
Nominal value
A
A
A2s
mA
mA
V
A/μs
A/μs
8.3 msec (60Hz), sinusoidal wave-
shape, 180o conduction, Tj = 125 oC
10.0 msec (50Hz), sinusoidal wave-
shape, 180o conduction, Tj = 125 oC
8.3 msec
VD = 24 V; RL= 12 ohms
VD = 24 V; I = 2.5 A
ITM =2000 A; Tj = 125 oC
Switching from VDRM 1000 V,
non-repetitive
Switching from VDRM 1000 V

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Technical Data : CD-069
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ELECTRICAL CHARACTERISTICS AND RATINGS (cont’d)
YC448 - Power Thyristor
Gating
Parameter
Peak gate power dissipation
Average gate power dissipation
Symbol Min.
PGM
PG(AV)
Max. Typ.
200
5
Units
W
W
Conditions
tp = 40 us
Peak gate current
Gate current required to trigger all
units
IGM
IGT
Gate voltage required to trigger all VGT
units
10
300
200
125
5
3
0.30
Peak negative voltage
VGRM
5
A
mA VD = 6 V;RL = 3 ohms;Tj = -40 oC
mA VD = 6 V;RL = 3 ohms;Tj = +25 oC
mA VD = 6 V;RL = 3 ohms;Tj = +125oC
V VD = 6 V;RL = 3 ohms;Tj = -40 oC
V VD = 6 V;RL = 3 ohms;Tj = 0-125oC
V VD = Rated VDRM; RL = 1000 ohms;
Tj = + 125 oC
V
Dynamic
Parameter
Delay time
Turn-off time (with VR = -5 V)
Reverse recovery charge
Symbol Min.
td
tq
Irr
Max. Typ. Units
μs
1.5 0.8
25 μs
μC
Conditions
ITM = 50 A; VD = 67% VDRM
Gate pulse: VG = 30 V; RG = 10 ohms;
tr = 0.1 μs; tp = 20 μs
ITM > 500 A; di/dt = 25 A/μs;
VR -5 V; Re-applied dV/dt = 200
V/μs linear to 67% VDRM ;
Tj = 125 oC; Duty cycle 0.01%
ITM > 1000 A; di/dt = 25 A/μs;
VR -50 V; Tj = 125 oC
THERMAL AND MECHANICAL CHARACTERISTICS AND RATINGS
Parameter
Operating temperature
Storage temperature
Thermal resistance - junction to
case
Thermal resistamce - case to sink
Mounting force
Weight
Symbol Min. Max. Typ.
Tj -40 +125
Tstg -40 +140
Units
oC
oC
Conditions
RΘ (j-c)
0.040
0.080
oC/W Double sided cooled
Single sided cooled
RΘ (c-s)
P
W
3000
13.4
0.015
0.030
3500
15.7
oC/W
lb.
kN
9 oz
255 g.
Double sided cooled *
Single sided cooled
* Mounting surfaces smooth, flat and greased

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CASE OUTLINE AND DIMENSIONS
3T φ34
Technical Data : CD-069
Page 3 of 3
φ34
φ52
2-φ3.5×1.9
φ57.2
35.5
20o±5o