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MMIS60R580P Datasheet
MMIS60R580P
600V 0.58N-channel MOSFET
Description
MMIS60R580P is power MOSFET using magnachips advanced super junction technology that
can realize very low on-resistance and gate charge. It will provide much high efficiency by using
optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to
designers as well as low switching loss.
Key Parameters
Parameter
VDS @ Tj,max
RDS(on),max
VTH,typ
ID
Qg,typ
Value
650
0.58
3
8
18
Unit
V
V
A
nC
Package & Internal Circuit
D
G
D
S
G
S
Features
Low Power Loss by High Speed Switching and Low On-Resistance
100% Avalanche Tested
Green Package Pb Free Plating, Halogen Free
Applications
PFC Power Supply Stages
Switching Applications
Adapter
Motor Control
DC DC Converters
Ordering Information
Order Code
Marking
MMIS60R580PTH 60R580P
Temp. Range
-55 ~ 150
Package
TO-251-VS
(IPAK-VS)
Mar. 2016 Revision 1.1
1
Packing
Tube
RoHS Status
Halogen Free
MagnaChip Semiconductor Ltd.

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MMIS60R580P Datasheet
Absolute Maximum Rating (Tc=25unless otherwise specified)
Parameter
Drain Source voltage
Gate Source voltage
Continuous drain current
Pulsed drain current(1)
Power dissipation
Single - pulse avalanche energy
MOSFET dv/dt ruggedness
Symbol
VDSS
VGSS
ID
IDM
PD
EAS
dv/dt
Rating
600
±30
8
5
24
70
170
50
Unit
V
V
A
A
A
W
mJ
V/ns
Note
TC=25
TC=100
Diode dv/dt ruggedness
Storage temperature
Maximum operating junction
temperature
1) Pulse width tP limited by Tj,max
2) ISD ID, VDS peak V(BR)DSS
dv/dt
Tstg
Tj
15
-55 ~150
150
V/ns
Thermal Characteristics
Parameter
Thermal resistance, junction-case max
Thermal resistance, junction-ambient max
Symbol
Rthjc
Rthja
Value
1.8
62.5
Unit
/W
/W
Mar. 2016 Revision 1.1
2 MagnaChip Semiconductor Ltd.

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MMIS60R580P Datasheet
Static Characteristics (Tc=25unless otherwise specified)
Parameter
Drain Source
Breakdown voltage
Gate Threshold Voltage
Zero Gate Voltage
Drain Current
Gate Leakage Current
Drain-Source On
State Resistance
Symbol Min. Typ. Max. Unit Test Condition
V(BR)DSS 600
-
-
V VGS = 0V, ID=0.25mA
VGS(th) 2 3 4
V VDS = VGS, ID=0.25mA
IDSS - - 1 μA VDS = 600V, VGS = 0V
IGSS
RDS(ON)
- - 100 nA VGS = ±30V, VDS =0V
- 0.53 0.58 VGS = 10V, ID = 2.5 A
Dynamic Characteristics (Tc=25unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit Test Condition
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance
Energy Related (3)
Turn On Delay Time
Ciss
Coss
Crss
Co(er)
td(on)
- 575 -
- 428 -
- 25 -
- 18 -
- 14 -
VDS = 25V, VGS = 0V,
pF f = 1.0MHz
VDS = 0V to 480V,
VGS = 0V,f = 1.0MHz
Rise Time
Turn Off Delay Time
tr
td(off)
- 34 -
- 48 -
ns
VGS = 10V, RG = 25Ω,
VDS = 300V, ID = 8 A
Fall Time
tf - 25 -
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Qg - 18 -
Qgs
-
5
-
nC
VGS = 10V, VDS = 480V,
ID = 8 A
Qgd - 7 -
Gate Resistance
RG
- 4.3 -
VGS = 0V, f = 1.0MHz
3) Co(er) is a capacitance that gives the same stored energy as COSS while VDS is rising from 0V to 80% V(BR)DSS
Mar. 2016 Revision 1.1
3 MagnaChip Semiconductor Ltd.