2SD1416.pdf 데이터시트 (총 2 페이지) - 파일 다운로드 2SD1416 데이타시트 다운로드

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INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
2SD1416
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 80V(Min)
·Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.5V(Max) @IC= 3A
·High DC Current Gain
: hFE= 2000(Min) @ IC= 3A, VCE= 3V
·Complement to Type 2SB1021
APPLICATIONS
·Hammer driver,pulse motor drive applications.
·High power switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
80 V
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
80 V
5V
IC Collector Current-Continuous
7A
IB Base Current-Continuous
PC
Collector Power Dissipation
@ TC=25
TJ Junction Temperature
0.2 A
30 W
150
Tstg Storage Temperature Range
-55~150
isc websitewww.iscsemi.cn
1

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INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
2SD1416
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; IB= 0
80
V
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 3A; IB= 6mA
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 7A; IB= 14mA
VBE(sat) Base-Emitter Saturation Voltage
IC= 3A; IB= 6mA
ICBO Collector Cutoff Current
VCB= 80V; IE= 0
1.5 V
2.0 V
2.5 V
100 μA
IEBO Emitter Cutoff Current
hFE -1
DC Current Gain
VEB= 5V; IC= 0
IC= 3A; VCE= 3V
2000
3.0 mA
15000
hFE -2
DC Current Gain
IC= 7A; VCE= 3V
1000
Switching times
ton Turn-on Time
tstg Storage Time
tf Fall Time
IB1= -IB2= 6mA
RL= 15Ω; VCC= 45V
PW=20μs; Duty Cycle1%
0.8 μs
3.0 μs
2.5 μs
isc websitewww.iscsemi.cn
2