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Ordering number:EN2112B
PNP/NPN Epitaxial Planar Silicon Transistors
2SB1201/2SD1801
High-Current Switching Applications
Applications
· Voltage regulators, relay drivers, lamp drivers,
electrical equipment.
Features
· Adoption of FBET, MBIT processes.
· Large current capacity and wide ASO.
· Low collector-to-emitter saturation voltage.
· Fast switching speed.
· Small and slim package making it easy to make
2SB1201/2SD1801-used sets smaller.
Package Dimensions
unit:mm
2045B
[2SB1201/2SD1801]
unit:mm
2044B
1 : Base
2 : Collector
3 : Emitter
4 : Collector
SANYO : TP
[2SB1201/2SD1801]
1 : Base
2 : Collector
3 : Emitter
4 : Collector
SANYO : TP-FA
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
92098HA (KT)/8259MO/4137KI/4076KI, TS No.2112–1/5

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2SB1201/2SD1801
( ) : 2SB1201
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Junction Temperature
Storage Temperature
Tj
Tstg
Electrical Characteristics at Ta = 25˚C
Tc=25˚C
Conditions
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Symbol
Conditions
ICBO
IEBO
hFE1
hFE2
fT
Cob
VCE(sat)
VCB=(–)50V, IE=0
VEB=(–)4V, IC=0
VCE=(–)2V, IC=(–)100mA
VCE=(–)2V, IC=(–)1.5A
VCE=(–)10V, IC=(–)50mA
VCB=(–)10V, f=1MHz
IC=(–)1A, IB=(–)50mA
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
ton
tstg
IC=(–)1A, IB=(–)50mA
IC=(–)10µA, IE=0
IC=(–)1mA, RBE=
IE=(–)10µA, IC=0
See specified Test Circuit
See specified Test Circuit
Fall Time
tf See specified Test Circuit
* : The 2SB1201/2SD1801 are classified by 100mA hFE as follows :
100 R 200 140 S 280 200 T 400 280 U 560
Switching Time Test Circuit
Ratings
(–)60
(–)50
(–)6
(–)2
(–)4
0.8
15
150
–55 to +150
Unit
V
V
V
A
A
W
W
˚C
˚C
Ratings
min typ
100*
40
(–)60
(–)50
(–)6
150
(22)12
0.15
(–0.3)
(–)0.9
60
(450)
550
30
max
(–)100
(–)100
560*
0.4
(–0.7)
(–)1.2
Unit
nA
nA
MHz
pF
V
V
V
V
V
V
ns
ns
ns
ns
No.2112–2/5

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2SB1201/2SD1801
No.2112–3/5