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DTC114EM3T5G Series
Digital Transistors (BRT)
NPN Silicon Surface Mount Transistors
with Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single
device and its external resistor bias network. The digital transistor
contains a single transistor with a monolithic bias network consisting
of two resistors; a series base resistor and a base−emitter resistor. The
digital transistor eliminates these individual components by
integrating them into a single device. The use of a digital transistor can
reduce both system cost and board space. The device is housed in the
SOT−723 package which is designed for low power surface mount
applications.
Features
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
The SOT−723 Package can be Soldered using Wave or Reflow.
Available in 4 mm, 8000 Unit Tape & Reel
These are Pb−Free Devices
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector-Base Voltage
VCBO
50 Vdc
Collector-Emitter Voltage
VCEO
50 Vdc
Collector Current
IC 100 mAdc
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
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NPN SILICON DIGITAL
TRANSISTORS
PIN 1
BASE
(INPUT)
R1
R2
PIN 3
COLLECTOR
(OUTPUT)
PIN 2
EMITTER
(GROUND)
3
2
1
SOT−723
CASE 631AA
STYLE 1
MARKING DIAGRAM
xx
xx = Specific Device Code
(See Marking Table on page 2)
M = Date Code
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2006
March, 2006 − Rev. 3
1
Publication Order Number:
DTC114EM3/D

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DTC114EM3T5G Series
DEVICE MARKING AND RESISTOR VALUES
Device
DTC114EM3T5G
Marking
8A
R1 (K)
10
R2 (K)
10
Package
Shipping
DTC124EM3T5G
8B 22 22
DTC144EM3T5G
8C 47 47
DTC114YM3T5G
8D 10 47
DTC114TM3T5G
8E 10
DTC143TM3T5G
8F 4.7
DTC123EM3T5G
DTC143EM3T5G
8H
8J
2.2 2.2 SOT−723
4.7 4.7 (Pb−Free)
8000/Tape & Reel
DTC143ZM3T5G*
8K 4.7 47
DTC124XM3T5G*
8L 22 47
DTC123JM3T5G
8M 2.2 47
DTC115EM3T5G
8N 100 100
DTC144WM3T5G*
8P 47 22
DTC144TM3T5G
8T 47
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*Available upon request.
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation,
FR−4 Board (Note 1) @ TA = 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient (Note 1)
Total Device Dissipation,
FR−4 Board (Note 2) @ TA = 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient (Note 2)
Junction and Storage Temperature Range
1. FR−4 @ minimum pad.
2. FR−4 @ 1.0 × 1.0 inch pad.
Symbol
PD
RqJA
PD
RqJA
TJ, Tstg
Max
260
2.0
480
600
4.8
205
−55 to +150
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
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DTC114EM3T5G Series
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
OFF CHARACTERISTICS
Collector−Base Cutoff Current (VCB = 50 V, IE = 0)
Collector−Emitter Cutoff Current (VCE = 50 V, IB = 0)
Emitter−Base Cutoff Current
(VEB = 6.0 V, IC = 0)
DTC114EM3T5G
DTC124EM3T5G
DTC144EM3T5G
DTC114YM3T5G
DTC114TM3T5G
DTC143TM3T5G
DTC123EM3T5G
DTC143EM3T5G
DTC143ZM3T5G
DTC124XM3T5G
DTC123JM3T5G
DTC115EM3T5G
DTC144WM3T5G
DTC144TM3T5G
ICBO
ICEO
IEBO
− 100 nAdc
− 500 nAdc
− 0.5 mAdc
− 0.2
− 0.1
− 0.2
− 0.9
− 1.9
− 2.3
− 1.5
− 0.18
− 0.13
− 0.2
− 0.05
− 0.13
− 0.2
Collector−Base Breakdown Voltage (IC = 10 mA, IE = 0)
Collector−Emitter Breakdown Voltage (Note 3)
(IC = 2.0 mA, IB = 0)
V(BR)CBO
V(BR)CEO
50
50
− Vdc
− Vdc
ON CHARACTERISTICS (Note 3)
DC Current Gain
(VCE = 10 V, IC = 5.0 mA)
DTC114EM3T5G
hFE 35 60
DTC124EM3T5G
60 100
DTC144EM3T5G
80 140
DTC114YM3T5G
80 140
DTC114TM3T5G
160 350
DTC143TM3T5G
160 350
DTC123EM3T5G
8.0 15
DTC143EM3T5G
15 30
DTC143ZM3T5G
80 200
DTC124XM3T5G
80 150
DTC123JM3T5G
80 140
DTC115EM3T5G
80 150
DTC144WM3T5G
80 140
DTC144TM3T5G
160 350
Collector−Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA)
(IC = 10 mA, IB = 5 mA)
DTC123EM3T5G
(IC = 10 mA, IB = 1 mA)
DTC143TM3T5G/DTC114TM3T5G/
DTC143EM3T5G/DTC143ZM3T5G/
DTC124XM3T5G/DTC144TM3T5G
VCE(sat)
− 0.25 Vdc
Output Voltage (on)
(VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW)
(VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kW)
(VCC = 5.0 V, VB = 5.5 V, RL = 1.0 kW)
(VCC = 5.0 V, VB = 4.0 V, RL = 1.0 kW)
DTC114EM3T5G
DTC124EM3T5G
DTC114YM3T5G
DTC114TM3T5G
DTC143TM3T5G
DTC123EM3T5G
DTC143EM3T5G
DTC143ZM3T5G
DTC124XM3T5G
DTC123JM3T5G
DTC144EM3T5G
DTC144TM3T5G
DTC115EM3T5G
DTC144WM3T5G
3. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%.
VOL
Vdc
− 0.2
− 0.2
− 0.2
− 0.2
− 0.2
− 0.2
− 0.2
− 0.2
− 0.2
− 0.2
− 0.2
− 0.2
− 0.2
− 0.2
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