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November 2014
FFPF08H60S
8 A, 600 V, Hyperfast II Diode
Features
Hyperfast Recovery trr = 45 ns (@ IF = 8 A)
Max Forward Voltage, VF = 2.6 V (@ TC = 25°C)
600 V Reverse Voltage and High Reliability
Avalanche Energy Rated
RoHS Compliant
Applications
• General Purpose
• Switching Mode Power Supply
• Free-Wheeling Diode for Motor Application
• Power Switching Circuits
Description
The FFPF08H60S is a hyperfast II diode with soft recovery
characteristics. It has the half recovery time of ultrafast diodes
and is silicon nitride passivated ionimplanted epitaxial planar
construction. These devices are intended to be used as
freewheeling/ clamping diodes and diodes in a variety of
switching power supplies and other power switching
applications. Their low stored charge and hyperfast soft recovery
minimize ringing and electrical noise in many power switching
circuits reducing power loss in the switching transistors.
Pin Assignments
TO-220F-2L
1. Cathode 2. Anode
1
1. Cathode
2
2. Anode
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VRRM
VRWM
VR
IF(AV)
IFSM
TJ, TSTG
Parameter
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
Non-repetitive Peak Surge Current
60Hz Single Half-Sine Wave
@ TC = 105 °C
Operating Junction and Storage Temperature
Ratings
600
600
600
8
60
- 65 to +175
Unit
V
V
V
A
A
°C
Thermal Characteristics TC = 25°C unless otherwise noted
Symbol
RθJC
Parameter
Maximum Thermal Resistance, Junction to Case
Max.
3.4
Unit
°C/W
Package Marking and Ordering Information
Part Number
FFPF08H60STU
Top Mark
FFPF08H60S
Package Packing Method
TO-220F-2L
Tube
Reel Size
N/A
Tape Width
N/A
Quantity
60
©2007 Fairchild Semiconductor Corporation
FFPF08H60S Rev. C2
1
www.fairchildsemi.com

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Electrical Characteristics TC = 25°C unless otherwise noted
Parameter
VF1
IR1
trr
ta
tb
Qrr
WAVL
Conditions
IF = 8 A
IF = 8 A
VR = 600 V
VR = 600 V
IF =1 A, diF/dt = 100 A/µs, VR = 30 V
IF =8 A, diF/dt = 100 A/µs, VR = 390 V
IF =8 A, diF/dt = 100 A/µs, VR = 390 V
Avalanche Energy (L = 40 mH)
Notes:
1. Pulse : Test Pulse width = 300 µs, Duty Cycle = 2%
Test Circuit and Waveforms
TC = 25 °C
TC = 125 °C
TC = 25 °C
TC = 125 °C
TC = 25 °C
TC = 25 °C
TC = 25 °C
TC = 25 °C
TC = 25 °C
Min.
-
-
-
-
-
-
-
-
-
20
Typ.
-
-
-
-
-
-
15
16
18.6
-
Max
2.1
1.7
100
200
35
45
-
-
-
-
Unit
V
V
µA
µA
ns
ns
ns
ns
nC
mJ
Figure 1. Diode Reverse Recovery Test Circuit & Waveform
Figure 2. Unclamped Inductive Switching Test Circuit & Waveform
©2007 Fairchild Semiconductor Corporation
FFPF08H60S Rev. C2
2
www.fairchildsemi.com

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Typical Performance Characteristics TC = 25°C unless otherwise noted
Figure 3. Typical Forward Voltage Drop
Figure 4. Typical Reverse Current
100 100
TC=100oC
10
TC=150oC
1
TC=25oC
10
TC=125oC
1
0.1
TC=25oC
0.01
0.1
012345
FORWARD VOLTAGE, VF [V]
1E-3
0
100 200 300 400 500
REVERSE VOLTAGE, VR [V]
600
Figure 5. Typical Junction Capacitance
80
f=1MHz
60
40
20
0
1 10 100
REVERSE VOLTAGE, VR [V]
Figure 6. Typical Reverse Recovery Time
100
90
80
70
60
50
40
30
20
10
100
IF=8A
TC=125oC
TC=25oC
200 300
diF/dt [A/µs]
400 500 600
Figure 7. Typical Reverse Recovery Current
14
12
10
8
6
4
2
0
100
IF=8A
TC=125oC
TC=25oC
200 300
diF/dt [A/µs]
400 500 600
Figure 8. Forward Current Deration Curve
10
8
6
DC
4
2
0
80 90 100 110 120 130 140 150
CASE TEMPERATURE, TC [oC]
©2007 Fairchild Semiconductor Corporation
FFPF08H60S Rev. C2
3
www.fairchildsemi.com