80NF03L-04.pdf 데이터시트 (총 11 페이지) - 파일 다운로드 80NF03L-04 데이타시트 다운로드

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STP80NF03L-04
STB80NF03L-04 STB80NF03L-04-1
N-CHANNEL 30V - 0.0035 - 80A D2PAK/I2PAK/TO-220
STripFET™ II POWER MOSFET
TYPE
VDSS
RDS(on)
STB80NF03L-04/-1
STP80NF03L-04
30 V <0.004
30 V <0.004
s TYPICAL RDS(on) = 0.0035
s EXCEPTIONAL dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s LOW THRESHOLD DRIVE
ID
80 A
80 A
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™" strip-
based process. The resulting transistor shows extremely
high packing density for low on-resistance, rugged
avalanche characteristics and less critical alignment
steps therefore a remarkable manufacturing
reproducibility.
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s MOTOR CONTROL, AUDIO AMPLIFIERS
s DC-DC & DC-AC CONVERTERS
s AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
3
1
D2PAK
TO-263
123
I2PAK
TO-262
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
Ordering Information
SALES TYPE
STB80NF03L-04
STB80NF03L-04T4
STP80NF03L-04
STB80NF03L-04-1
MARKING
80NF03L-04 @
80NF03L-04 @
80NF03L-04 @
80NF03L-04 @
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 k)
VGS Gate- source Voltage
ID(**)
Drain Current (continuous) at TC = 25°C
ID(**)
Drain Current (continuous) at TC = 100°C
IDM(•)
Drain Current (pulsed)
Ptot Total Dissipation at TC = 25°C
Derating Factor
dv/dt (1) Peak Diode Recovery voltage slope
EAS (2) Single Pulse Avalanche Energy
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area.
(**) Current Limited by Package
February 2003
.
PACKAGE
D2PAK
D2PAK
TO-220
I2PAK
PACKAGING
TUBE
TAPE & REEL
TUBE
TUBE
Value
30
30
± 20
80
80
320
300
2
2
2.3
-60 to 175
175
(1) ISD 80A, di/dt 240A/µs, VDD 24V, Tj TJMAX
(2) Starting Tj = 25 oC, ID = 40A, VDD = 20V
Unit
V
V
V
A
A
A
W
W/°C
V/ns
J
°C
°C
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STB80NF03L-04/-1/STP80NF03L-04
THERMAL DATA
Rthj-case
Rthj-amb
Tl
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Maximum Lead Temperature For Soldering Purpose
Max
Max
Typ
0.5
62.5
300
ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified)
OFF
Symbol
Parameter
Test Conditions
Min. Typ.
V(BR)DSS Drain-source
Breakdown Voltage
ID = 250 µA VGS = 0
30
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating TC = 125°C
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 20 V
°C/W
°C/W
°C
Max.
Unit
V
1
10
±100
µA
µA
nA
ON (*)
Symbol
VGS(th)
RDS(on)
Parameter
Gate Threshold Voltage
Static Drain-source On
Resistance
Test Conditions
VDS = VGS
ID = 250 µA
VGS = 10 V
VGS = 4.5 V
ID = 40 A
ID = 40 A
Min.
1
Typ. Max.
0.0035 0.004
0.004 0.0055
Unit
V
DYNAMIC
Symbol
gfs (*)
Ciss
Coss
Crss
Parameter
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS = 15 V
ID = 15 A
VDS = 25V, f = 1 MHz, VGS = 0
Min.
Typ.
50
5500
1670
290
Max.
Unit
S
pF
pF
pF
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STB80NF03L-04/-1/STP80NF03L-04
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
Parameter
Test Conditions
td(on)
tr
Turn-on Delay Time
Rise Time
VDD = 15 V
ID = 40 A
RG = 4.7
VGS = 4.5 V
(Resistive Load, Figure 3)
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDD =24V ID =80 A VGS=4.5V
Min.
Typ.
30
270
85
23
40
Max.
110
Unit
ns
ns
nC
nC
nC
SWITCHING OFF
Symbol
Parameter
td(off)
tf
Turn-off Delay Time
Fall Time
tr(Voff)
tf
tc
Off-Voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
VDD = 15 V
ID = 40 A
RG = 4.7Ω,
VGS = 4.5 V
(Resistive Load, Figure 3)
Vclamp = 24 V
ID = 80 A
RG = 4.7
VGS = 4.5 V
(Inductive Load, Figure 5)
Min.
Typ.
110
95
125
75
125
Max.
Unit
ns
ns
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
ISD
ISDM ()
Source-drain Current
Source-drain Current (pulsed)
VSD (*) Forward On Voltage
ISD = 80 A
VGS = 0
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
(*)Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
(•)Pulse width limited by safe operating area.
ISD = 80 A
di/dt = 100A/µs
VDD = 20 V
Tj = 150°C
(see test circuit, Figure 5)
Min.
Typ.
75
0.15
4
Max.
80
320
1.5
Unit
A
A
V
ns
µC
A
Safe Operating Area
Thermal Impedance
3/11

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STB80NF03L-04/-1/STP80NF03L-04
Output Characteristics
Transfer Characteristics
Transconductance
Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage
Capacitance Variations
4/11

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Normalized Gate Threshold Voltage vs Temperature
STB80NF03L-04/-1/STP80NF03L-04
Normalized on Resistance vs Temperature
Source-drain Diode Forward Characteristics
Normalized Breakdown Voltage vs Temperature.
..
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