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2MBI50N-060
600V / 50A 2 in one-package
IGBT Module
Features
· High speed switching
· Voltage drive
· Low inductance module structure
Applications
· Inverter for Motor drive
· AC and DC Servo drive amplifier
· Uninterruptible power supply
· Industrial machines, such as Welding machines
Maximum ratings and characteristics
Absolute maximum ratings (at Tc=25°C unless otherwise specified)
Item
Symbol
Collector-Emitter voltage
VCES
Gate-Emitter voltaga
VGES
Collector Continuous
IC
current 1ms
IC pulse
Continuous
-IC
1ms -IC pulse
Max. power dissipation
PC
Operating temperature
Tj
Storage temperature
Tstg
Isolation voltage
Vis
Screw torque
Mounting *1
Terminals *1
*1 : Recommendable value : 2.5 to 3.5 N·m(M5)
Rating
600
±20
50
100
50
100
250
+150
-40 to +125
AC 2500 (1min.)
3.5
3.5
Unit
V
V
A
A
A
A
W
°C
°C
V
N·m
N·m
Equivalent Circuit Schematic
C2E1
C1 E2
¤¤
G1 E1
G2
¤ Current control circuit
E2
Electrical characteristics (at Tj=25°C unless otherwise specified)
Item
Symbol
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time
Turn-off time
Diode forward on voltage
Reverse recovery time
ICES
IGES
VGE(th)
VCE(sat)
Cies
Coes
Cres
ton
tr
toff
tf
VF
trr
Characteristics
Min.
Typ.
––
––
4.5 –
––
– 3300
– 730
– 330
– 0.6
– 0.2
– 0.6
– 0.2
––
––
Max.
1.0
15
7.5
2.8
1.2
0.6
1.0
0.35
3.0
0.3
Conditions
VGE=0V, VCE=600V
VCE=0V, VGE=±20V
VCE=20V, IC=50mA
VGE=15V, IC=50A
VGE=0V
VCE=10V
f=1MHz
VCC=300V
IC=50A
VGE=±15V
RG=51 ohm
IF=50A, VGE=0V
IF=50A
Unit
mA
µA
V
V
pF
µs
V
µs
Thermal resistance characteristics
Item
Symbol
Characteristics
Conditions
Thermal resistance
Rth(j-c)
Rth(j-c)
Rth(c-f)*2
Min.
Typ.
0.05
Max.
0.5
1.33
IGBT
Diode
the base to cooling fin
*2 : This is the value which is defined mounting on the additional cooling fin with thermal compound
Unit
°C/W
°C/W
°C/W

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2MBI50N-060
Characteristics (Representative)
Collector current vs. Collector-Emitter voltage
Tj=25°C
125
100
75
50
25
0
012345
Collector-Emitter voltage : VCE [V]
IGBT Module
125
100
75
50
25
0
0
Collector current vs. Collector-Emitter voltage
Tj=125°C
1234
Collector-Emitter voltage : VCE [V]
5
10
8
6
4
2
0
0
1000
Collector-Emitter vs. Gate-Emitter voltage
Tj=25°C
5 10 15
Gate-Emitter voltage : VGE [V]
20
Switching time vs. Collector current
Vcc=300V, RG=51 ohm, VGE=±15V, Tj=25°C
10
8
6
4
2
0
25 0
1000
Collector-Emitter vs. Gate-Emitter voltage
Tj=125°C
5 10 15 20
Gate-Emitter voltage : VGE [V]
25
Switching time vs. Collector current
Vcc=300V, RG=51 ohm, VGE=±15V, Tj=125°C
100 100
10
0
20 40 60
Collector current : Ic [A]
80
10
0
20 40 60
Collector current : Ic [A]
80

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2MBI50N-060
IGBT Module
1000
100
10
10
125
100
75
50
25
0
0
5
4
3
2
1
0
0
Switching time vs. RG
Vcc=300V, Ic=50A, VGE=±15V, Tj=25°C
30 50
Gate resistance : RG [ohm]
100
Forward current vs. Forward voltage
VGE=0V
123
Emitter-Collector voltage VECD [V]
(Forward voltage : VF [V])
Switching loss vs. Collector current
Vcc=300V, RG=51 ohm, VGE=±15V
4
20 40
Collector current : Ic [A]
60
80
500
400
300
200
100
00
0
Dynamic input characteristics
Tj=25°C
25
20
15
10
5
0
50
100
150
200 250
300
Gate charge : Qg [nC]
Reverse recovery characteristics
trr, Irr, vs. IF
100
50
10
0 20 40 60 80
Forward current : IF [A]
Reversed biased safe operating area
+VGE=15V, -VGE =< 15V, Tj <= 125°C, RG >= 51 ohm
500
400
300
200
100
0
0
100 200 300 400
500 600
Collector-Emitter voltage : VCE [V]

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2MBI50N-060
Transient thermal resistance
1
0.1
0.001
0.01
0.1
Pulse width : PW [sec.]
IGBT Module
Capacitance vs. Collector-Emitter voltage
Tj=25°C
10
1
0.1
1 0 5 10 15 20 25 30 35
Collector-Emitter voltage : VCE [V]
Outline Drawings, mm
mass : 180g