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PHOTOTRANSISTOR
L-93DP3C
Features
!MECHANICALLY AND SPECTRALLY MATCHED TO
THE INFRARED EMITTING LED LAMP.
!WATER CLEAR LENS.
Description
P3 Made with NPN silicon phototransistor chips.
Package Dimensions
Notes:
1. All dimensions are in millimeters (inches).
2. Tolerance is ±0.25(0.01") unless otherwise noted.
3. Lead spacing is measured where the lead emerge package.
4. Specifications are subject to change without notice.
SPEC NO: DSAC1289
APPROVED : J. Lu
REV NO: V.1
CHECKED : Allen Liu
DATE: DEC/06/2002
DRAWN: D.L.HUANG
PAGE: 1 OF 2

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Electrical \ Radiant Characteristics at TA=25°C
Symbol
Parameter
Min.
V BRCEO Collector-to-Emitter Breakdown Voltage
V BRECO Emitter-to-Collector Breakdown Voltage
V CE (SAT) Collector-to-Emitter Saturation Voltage
I CEO Collector Dark Current
TR Rise Time (10% to 90%)
TF
CCB
λSMAX
Fall Time (90% to 10%)
Collector-base Capacitance
Wavelength of the max sensitivity
30
5
-
-
-
-
-
-
I (ON) On State Collector Current
0.2
Typ.
-
-
-
-
3
3
6.4
940
0.6
Max.
-
-
0.8
100
-
-
-
Unit
V
V
V
nA
us
us
pF
nm
mA
Test Condiction
I C=100uA,
Ee=0mW/cm2
I E=100uA,
Ee=0mW/cm2
I C=2mA,
Ee=20mW/cm2
VCE=10V,
Ee=0mW/cm2
V CE=5V,
I C=1mA,
R L=1000
F=1MHZ
VCB =3V
VCE=5V,
Ee=1mW/cm2,
λ=940nm
Absolute Maximum Ratings at TA=25°C
Parameter
Power dissipation
Operating Temperature Range
Storage Temperature Range
Lead Solder Temperature [1]
Note:
1. 2mm below package base.
Maximum Rating
100mW
-40°C To +85°C
-40°C To +85°C
260°C For 5 Seconds
SPEC NO: DSAC1289
APPROVED : J. Lu
REV NO: V.1
CHECKED : Allen Liu
DATE: DEC/06/2002
DRAWN: D.L.HUANG
PAGE: 2 OF 2