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OCH177
Micro Power Omnipolar Hall-effect Sensor Switch
„ General Description
The OCH177 Omnipolar Hall-effect Sensor IC is
fabricated from mixed signal CMOS technology. It is
comprised of two Hall plates and a CMOS output
driver, mainly designed for battery-operation,
hand-held equipment (such as Cellular and Cordless
Phone, PDA). The total power consumption in normal
operation is typically 24μW with a 3V power source.
Either north or south poles of sufficient strength will
turn the output on. The output will be turned off under
no magnetic field. While the magnetic flux density (B)
is larger than operating point (BOP), the output will be
turned on (low), the output is held until B is lower than
release point (BRP), and then turned off.
The OCH177 is available in many flexible
packaging options, such as DFN1216-4L. Operating
temperature range of the OCH177 is from -40°C to
85°C.
To minimize the BOM cost, capacitors of the
MLCC type are supported, and only one external
component are needed to complete the application
circuit.
„ Features
z Micro power consumption ideal for
battery-powered applications
z Omnipolar (operation with magnetic field of either
north or south pole), easy to use as output
switches with both North and South pole
z Input Voltage Range: 2.4V to 5.5V
z Very High Sensitivity Hall Sensor
z Chopper stabilized amplifier stage
z Good RF noise immunity
z DFN1216-4L package
z ESD (HBM) 4KV
z Not need the push-high resistance
„ Applications
z Cover switch in clam-shell cellular phones
z Cover switch in Notebook PC/PDA
z Contact-less switch in consumer products
z Solid State Switch
z Handheld Wireless Handset Awake Switch
z Lid close sensor for battery-powered devise
z Magnet proximity sensor for reed switch
replacement in low duty cycle applications
„ Pin Configuration
(1) DFN1216_4L (Top View)
Pin No.
Pin Name OCH177 OCH177A
Pin Function
VDD
4
1 Power Supply Input
GND
2
2 Ground
OUTPUT
1
4 Output Pin
N.C 3
3 Not Connected
Note: NC is “No Connection” which is recommended to be tied to ground.
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Ver. 1.1 June. 08.2012

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„ Typical Application Circuit
OCH177
Micro Power Omnipolar Hall-effect Sensor Switch
Note: C is for power stabilization and to strengthen the noise immunity, the recommended capacitance is 10nF~100nF.
„ Block Diagram
„ Absolute Maximum Ratings (TA=25°C unless otherwise noted)
Parameter
Symbol
VDD to GND
Magnetic Flux Density
VDD
B
Storage Temperature Range
TS
Operating Junction Temperature Range
Package Power Dissipation
TJ
PD
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Rating
-0.3 to 5.5
Unlimited
-65 to +150
-40 to 150
230
Unit
V
mW
Ver. 1.1 June. 08.2012

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OCH177
Micro Power Omnipolar Hall-effect Sensor Switch
„ Recommended Operating Conditions (TA=25°C unless otherwise noted)
Parameter
Symbol
Conditions
Rating
Supply Voltage
VDD Operating
2.4 ~ 5.5
Operating Temperature Range
TA Operating
-40 ~ +85
Unit
V
„ Electrical Characteristics
(Unless otherwise notedtypical values are at TA=25, VDD=3V)
Symbol
Parameter
Conditions
VOH
VOL
IOFF
IDD(EN)
Output On Voltage (High side)
Output On Voltage (Low side)
Output Leakage Current
IDD(EN)
IDD(DIS)
IDD(DIS)
Supply Current
IDD(AVG)
IDD(AVG)
Tawake
Awake Time
IOUT=+1mA
IOUT=-1mA
VOUT=5.5V, Output off
Chip enable, TA =25, VDD = 3V
Chip enable, TA =-40~85,
VDD = 2.4~5.5V
Chip disable, TA=25,VDD = 3V
Chip disable, TA =-40~85,
VDD = 2.4~5.5V
Average supply current,
TA =25, VDD = 3V
Average supply current,
TA =-40~85, VDD = 2.4~5.5V
-
Tperiod
Period
-
D.C. Duty Cycle
-
Min.
VDD-0.3
-0.3
-
-
-
-
-
-
-
-
-
-
Typ.
VDD-0.1
0.1
<0.1
3
3
5
5
8
8
75
75
0.1
Max.
VDD+-0.3
0.3
1
6
9
10
15
16
24
125
125
-
Unit
V
V
μA
mA
mA
μA
μA
μA
μA
μs
ms
%
„ Magnetic Characteristics
(Unless otherwise noted, typical values are at TA=25, VDD=3V)
Symbol
Parameter
Min. Typ.
BOPS (south pole to brand side)
BOPN (north pole to brand side)
Operate Point
40
-60 -40
BRPS (south pole to brand side)
BRPN (north pole to brand side)
Release Point
10 30
-30
BHY (|BOPX-BRPX|)
Hysteresis
10
Notes: Operating point and release point will vary with supply voltage and operating temperature.
(1mT=10Gauss)
Max. Unit
60
Gauss
-10
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Ver. 1.1 June. 08.2012