1MBI75U4F-120L-50.pdf 데이터시트 (총 7 페이지) - 파일 다운로드 1MBI75U4F-120L-50 데이타시트 다운로드

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http://www.fujielectric.com/products/semiconductor/
1MBI75U4F-120L-50
IGBT MODULE (U series)
1200V / 75A / 1 in one package
IGBT Modules
Features
High speed switching
Voltage drive
Low Inductance module structure
Applications
Inverter DB for Motor Drive
AC and DC Servo Drive Amplifier (DB)
Active PFC
Industrial machines
Maximum Ratings and Characteristics
Absolute Maximum Ratings (at Tc=25°C unless otherwise specified)
Items
Collector-Emitter voltage
Gate-Emitter voltage
Symbols
VCES
VGES
Conditions
Ic Continuous
Collector current
Icp
-Ic
-Ic pulse
Collector power dissipation
Pc
Reverse voltage for FWD
VR
Forword current for FWD
IF
IF pulse
Junction temperature
Tj
Storage temperature
Tstg
Isolation voltage Between terminal and copper base (*1) Viso
Screw torque
Mounting (*2)
Terminals (*3)
-
Note *1: All terminals should be connected together when isolation test will be done.
Note *2: Recommendable Value : 2.5 to 3.5 Nm (M5 or M6)
Note *3: Recommendable Value : 2.5 to 3.5 Nm (M5)
1ms
1ms
1 device
Continuous
1ms
AC : 1min.
Tc=25°C
Tc=80°C
Tc=25°C
Tc=80°C
Maximum ratings
1200
±20
100
75
200
150
35
70
400
1200
100
200
+150
-40~+125
2500
3.5
Units
V
V
A
W
V
A
°C
°C
VAC
Nm
1

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1MBI75U4F-120L-50
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
Electrical characteristics (at Tj= 25°C unless otherwise specified)
Items
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Input capacitance
Turn-on time
Turn-off time
Forward on voltage
Reverse Current
Forward on voltage
Reverse recovery time
Lead resistance, terminal-chip(*4)
Note *4: Biggest internal terminal resistance among arm.
Thermal resistance characteristics
Symbols
ICES
IGES
VGE (th)
VCE (sat)
(terminal)
VCE (sat)
(chip)
Cies
ton
tr
tr(i)
toff
tf
VF
(terminal)
VF
(chip)
IR
VF
(terminal)
VF
(chip)
trr
R lead
Conditions
VGE = 0V, VCE = 1200V
VCE = 0V, VGE = ±20V
VCE = 20V, IC = 75mA
Tj=25°C
VGE = 15V
IC = 75A
Tj=125°C
Tj=25°C
Tj=125°C
VGE = 0V, VCE = 10V, f = 1MHz
VCC = 600V, IC = 75A
VGE = ±15V, RG = 9.1Ω
VGE = 0V
IF = 35A
VCE = 1200V
VGE = 0V
IF = 100A
IF = 100A
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Items
Symbols Conditions
IGBT
Thermal resistance (1device)
Rth(j-c)
Inverse Diode
FWD
Contact thermal resistance
Rth(c-f) with Thermal Compound (*5)
Note *5: This is the value which is defined mounting on the additional cooling fin with thermal compound.
Characteristics
min. typ. max.
- - 1.0
- - 200
4.5 6.5 8.5
- 2.05 2.20
- 2.25 -
- 1.90 2.05
- 2.10 -
-8-
- 0.32 1.20
- 0.10 0.60
- 0.03 -
- 0.41 1.00
- 0.07 0.30
- 1.65 2.00
- 1.75 -
- 1.60 1.85
- 1.70 -
- - 1.0
- 1.75 1.90
- 1.90 -
- 1.60 1.75
- 1.75 -
- - 0.35
- 1.39 -
Units
mA
nA
V
V
nF
µs
V
mA
V
µs
mΩ
Characteristics
min. typ. max.
- - 0.31
- - 0.88
- - 0.40
- 0.05 -
Units
°C/W
2

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1MBI75U4F-120L-50
Characteristics (Representative)
Collector current vs. Collector-Emitter voltage (typ.)
Tj=25oC / chip
200
VGE=20V 15V
12V
150
100
10V
50
0
0
8V
1234
Collector-Emitter voltage : VCE [ V ]
5
Collector current vs. Collector-Emitter voltage (typ.)
VGE=15V / chip
200
Tj=25oC Tj=125oC
150
100
50
0
01234
Collector-Emitter voltage : VCE [ V ]
5
Capacitance vs. Collector-Emitter voltage (typ.)
VGE=0V, f=1MHz, Tj=25oC
100.0
10.0 Cies
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
Collector current vs. Collector-Emitter voltage (typ.)
Tj=125oC / chip
200
VGE=20V 15V
12V
150
100
50
0
0
10V
8V
1234
Collector-Emitter voltage : VCE [ V ]
5
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
Tj=25oC / chip
10
8
6
4
Ic=150A
2 Ic=75A
Ic=37.5A
0
5 10 15 20 25
Gate-Emitter voltage : VGE [ V ]
Dynamic Gate charge (typ.)
Vcc=600V, Ic=75A, Tj=25oC
VCE
VGE
1.0
0.1
0
Cres
Coes
10 20
Collector-Emitter voltage : VCE [ V ]
30
3
0
0 100 200 300 400
Gate charge : Qg [ nC ]

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1MBI75U4F-120L-50
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
10000
Switching time vs. Collector current (typ.)
Vcc=600V, VGE=±15V, RG=9.1Ω,Tj=25oC
10000
Switching time vs. Collector current (typ.)
Vcc=600V, VGE=±15V, RG=9.1Ω,Tj=125oC
1000
100
toff
ton tr
tf
1000
100
ton
toff
tr
tf
10
0
50 100
Collector current : Ic [ A ]
150
Switching time vs. Gate resistance (typ.)
Vcc=600V, Ic=75A, VGE=±15V, Tj=25oC
10000
1000
ton
toff
tr
100
tf
10
1
10 100
Gate resistance : RG [ ]
1000
Switching loss vs. Gate resistance (typ.)
Vcc=600V, Ic=75A, VGE=±15V, Tj=125oC
40
10
0
50 100
Collector current : Ic [ A ]
150
Switching loss vs. Collector current (typ.)
Vcc=600V, VGE=±15V, RG=9.1Ω
14
Eon(125oC)
12
Eon(25oC)
10 Eoff(125oC)
8 Err(125oC)
Eoff(25oC)
6
Err(25oC)
4
2
0
0 25 50 75 100 125 150
Collector current : Ic [ A ]
Reverse bias safe operating area (max.)
+VGE=15V, -VGE <= 15V, RG >= 9.1Ω, Tj <= 125oC
200
30
20
10
0
1
Eon
Eoff
Err
10 100
Gate resistance : RG [ ]
1000
4
150
100
50
0
0
400
800
1200
1600
Collector-Emitter voltage : VCE [ V ]

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1MBI75U4F-120L-50
FWD
Forward current vs. Forward on voltage (typ.)
chip
250
Tj=25oC Tj=125oC
200
150
100
50
0
0123
Forward on voltage : VF [ V ]
4
Inverse Diode
Forward current vs. Forward on voltage (typ.)
chip
80
Tj=25oC Tj=125oC
60
40
20
0
0123
Forward on voltage : VF [ V ]
4
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
1000
FWD
Reverse recovery characteristics (typ.)
Vcc=600V, VGE=±15V, RG=9.1Ω
trr(125oC)
Irr(125oC)
100 trr(25oC)
Irr(25oC)
10
0
50 100
Forward current : IF [ A ]
150
10.00
Transient thermal resistance (max.)
1.00 Inberse Diode
FWD
IGBT
0.10
0.01
0.001
0.010
0.100
Pulse width : Pw [ sec ]
1.000
5