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SPECIFICATION
Device Name : IGBT MODULE
Type Name
: 2MBI75U4A-120
Spec. No. :
MS5F 6060
Mar. 09 05 S.Miyashita
Mar. 09 05 T.Miyasaka
K.Yamada
Y.Seki
MS5F6060
1
13
H04-004-07b

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Revised Records
Date
Classi-
fication
Ind.
Mar.-09 -05 Enactment
Content
Applied
date
Drawn
Checked Checked Approved
Issued
date
T.Miyasaka K.Yamada Y.Seki
MS5F6060
2
13
H04-004-06b

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1. Outline Drawing ( Unit : mm )
2MBI75U4A-120
2. Equivalent circuit
MS5F6060
3
13
H04-004-03a

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3. Absolute Maximum Ratings ( at Tc= 25oC unless otherwise specified )
It em s
Symbols
Conditions
Collector-Emitter voltage
Gate-Emitter voltage
VCES
VGES
Ic
Continuous
Collector current
Icp 1ms
-Ic
-Ic pulse 1ms
Collector Power Dissipation
Pc 1 device
Junction temperature
Tj
Storage temperature
Tstg
Isolation
voltage
between terminal and copper base (*1)
Viso
AC : 1min.
Screw Mounting (*2)
Torque Terminals (*2)
-
(*1) All terminals should be connected together when isolation test will be done.
(*2) Recommendable Value : 2.5 to 3.5 Nm (M5)
Tc=25oC
Tc=80oC
Tc=25oC
Tc=80oC
Max i m u m
Ratings
1200
±20
100
75
200
150
75
150
400
+150
-40 to +125
Units
V
V
A
W
oC
2500
VAC
3.5 N m
4. Electrical characteristics ( at Tj= 25oC unless otherwise specified )
It em s
Sym b o l s
Conditions
Characteristics
min. typ. max.
Zero gate voltage
collector current
ICES
VCE=1200V
VGE=0V
- - 1.0
Gate-Emitter
leakage current
IGES
VCE=0V
VGE=±20V
- - 200
Gate-Emitter
threshold voltage
VGE(th)
VCE=20V
Ic=75mA
4.5 6.5 8.5
VCE(sat) Ic=75A
Tj=25oC
-
2.05 2.20
Collector-Emitter
(terminal) VGE=15V
Tj=125oC
-
2.25
-
saturation voltage
VCE(sat)
Tj=25oC
-
1.90 2.05
(chip)
Tj=125oC
-
2.10
-
Input capacitance
Cies
VCE=10V,VGE=0V,f=1MHz -
8
-
ton Vcc=600V
- 0.32 1.20
Turn-on time
tr Ic=75A
- 0.10 0.60
tr(i) VGE=±15V
- 0.03
-
Turn-off time
toff RG=9.1Ω
tf
- 0.41 1.00
- 0.07 0.30
VF
IF=75A
Tj=25oC
-
1.80 1.95
Forward on voltage
(terminal)
VF
VGE=0V
Tj=125oC
Tj=25oC
-
-
1.90
1.65
-
1.80
(chip)
Tj=125oC
-
1.75
-
Reverse recovery time
trr
IF=75A
- - 0.35
Lead resistance,
terminal-chip (*3)
R lead
- 1.39
-
(*3) Biggest internal terminal resistance among arm.
Units
mA
nA
V
V
nF
us
V
us
mΩ
MS5F6060
4
13
H04-004-03a

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5. Thermal resistance characteristics
It em s
Sym b o l s
Conditions
Characteristics
min. typ. max.
Thermal resistance(1device) Rth(j-c)
IGBT
FWD
- - 0.31
- - 0.48
Contact Thermal resistance
(1 device) (*4)
Rth(c-f)
with Thermal Compound
-
0.05
-
(*4) This is the value which is defined mounting on the additional cooling fin with thermal compound.
Units
oC/W
6. Indication on module
Logo of production
Lot.No.
2M BI 75U4A-120
75A 1200V
Place of manufacturing (code)
7. Applicable category
This specification is applied to IGBT-Module named 2MBI75U4A-120.
8. Storage and transportation notes
The module should be stored at a standard temperature of 5 to 35oC and humidity of 45 to 75% .
Store modules in a place with few temperature changes in order to avoid condensation on the
module surface.
Avoid exposure to corrosive gases and dust.
Avoid excessive external force on the module.
Store modules with unprocessed terminals.
Do not drop or otherwise shock the modules when transporting.
9. Definitions of switching time
RG
V GE
L
V CE
Ic
0V
VGE
VCE
V cc
0V Ic
0A
10. Packing and Labeling
Display on the packing box
- Logo of production
- Type name
- Lot No
- Products quantity in a packing box
90%
tr r
9 0%
Ir r Ic
10% 10%
tr ( i )
tr
to n
VCE
to f f
0V
9 0%
10%
tf
MS5F6060
5
13
H04-004-03a