2MBI800U4G-120.pdf 데이터시트 (총 6 페이지) - 파일 다운로드 2MBI800U4G-120 데이타시트 다운로드

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http://www.fujielectric.com/products/semiconductor/
2MBI800U4G-120
IGBT MODULE (U series)
1200V / 800A / 2 in one package
Features
High speed switching
Voltage drive
Low Inductance module structure
Applications
Inverter for Motor Drive
AC and DC Servo Drive Amplifier
Uninterruptible Power Supply
Industrial machines, such as Welding machines
Maximum Ratings and Characteristics
Absolute Maximum Ratings (at Tc=25°C unless otherwise specified)
Items
Collector-Emitter voltage
Symbols
VCES
Conditions
Gate-Emitter voltage
VGES
Ic Continuous
Collector current
Ic pulse
1ms
-Ic
-Ic pulse
Collector power dissipation
Pc
Junction temperature
Tj
Storage temperature
Tstg
Isolation voltage Between terminal and copper base (*1) Viso
Mounting (*2)
M6
Screw torque Terminals (*3)
M8
M4
1ms
1 device
AC : 1min.
Note *1: All terminals should be connected together when isolation test will be done.
Note *2: Recommendable Value : Mounting 4.25~5.75 Nm (M6)
Note *3: Recommendable Value : Main Terminals 8~10 Nm (M8)
Sense Terminals 1.7~2.5 Nm (M4)
Electrical characteristics (at Tj= 25°C unless otherwise specified)
Tc=25°C
Tc=80°C
Tc=25°C
Tc=80°C
Items
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Input capacitance
Turn-on
Turn-off
Forward on voltage
Reverse recovery
Lead resistance, terminal-chip
Thermal resistance characteristics
Symbols Conditions
ICES VGE = 0V, VCE = 1200V
IGES VCE = 0V, VGE = ±20V
VGE (th)
VCE = 20V, IC = 800mA
VCE (sat)
Tj=25°C
(main terminal) VGE = 15V
Tj=125°C
VCE (sat)
IC = 800A
Tj=25°C
(chip)
Tj=125°C
Cies
VCE = 10V, VGE = 0V, f = 1MHz
ton VCC = 600V RGon = 5.6Ω
tr
IC = 800A
RGoff = 1.5Ω
toff VGE = ±15V
tf Tj = 125ºC
VF Tj=25°C
(main terminal) VGE = 0V
Tj=125°C
VF IF = 800A
Tj=25°C
(chip)
Tj=125°C
trr IF = 800A
R lead
Items
Symbols Conditions
Thermal resistance (1device)
Contact thermal resistance (1device)
Rth(j-c)
Rth(c-f)
IGBT
FWD
with Thermal Compound (*4)
Note *4: This is the value which is defined mounting on the additional cooling fin with thermal compound.
IGBT Modules
Maximum ratings
1200
±20
1200
800
2400
1600
800
1600
4800
150
-40 ~ +125
4000
5.75
10
2.5
Units
V
V
A
W
°C
VAC
Nm
Characteristics
min. typ. max.
- - 1.0
- - 1600
5.5 6.5 7.5
- 2.12 2.29
- 2.32 -
- 1.90 2.05
- 2.10 -
- 90 -
- 1.35 -
- 0.65 -
- 0.80 -
- 0.20 -
- 1.87 2.04
- 1.97 -
- 1.65 1.80
- 1.75 -
- 0.45 -
- 0.27 -
Units
mA
nA
V
V
nF
µs
V
µs
Characteristics
min. typ. max.
- - 0.026
- - 0.045
- 0.006 -
Units
°C/W
1

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2MBI800U4G-120
Characteristics (Representative)
Collector current vs. Collector-Emitter voltage (typ.)
Tj=25ºC,chip
1800
1600
VGE=20V 15V 12V
1400
1200
1000
800 10V
600
400
200
0
0.0
8V
1.0 2.0 3.0 4.0
Collector-Emitter voltage : VCE [V]
5.0
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 125°C, chip
1800
1600
1400
VGE=20V 15V
12V
1200
1000
800
10V
600
400
200 8V
0
0.0 1.0 2.0 3.0 4.0 5.0
Collector-Emitter voltage : VCE [V]
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
VGE=+15V,chip
1800
1600
Tj=25°C
Tj=125°C
1400
1200
1000
800
600
400
200
0
012345
Collector-Emitter voltage : VCE [V]
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
Tj=25ºC,chip
10
8
6
4
Ic=1600A
2 Ic=800A
Ic=400A
0
5 10 15 20 25
Gate - Emitter voltage : VGE [ V ]
Capacitance vs. Collector-Emitter voltage (typ.)
VGE=0V, f= 1MHz, Tj= 25°C
1000
1000
Dynamic Gate charge (typ.)
VCC=600V, IC=800A, Tj= 25°C
25
800 20
100 Cies
VCE
VGE
600 15
400
10 Cres
Coes
200
10
5
1
0 10 20
Collector-Emitter voltage : VCE [V]
30
00
0
1000
2000
3000
4000
Gate charge : Qg [ nC ]
2

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2MBI800U4G-120
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
Switching time vs. Collector current (typ.)
Vcc=600V, VGE=±15V, RGon=5.6Ω, RGoff=1.5Ω, Tj= 125°C
1.8
1.6
1.4
1.2
ton
1.0
toff
0.8
0.6
0.4 tf
0.2 tr
0.0
0
200
400 600 800 1000 1200 1400
Collector current : Ic [ A ]
Switching loss vs. Collector current (typ.)
Vcc=600V, VGE=±15V, RGon=5.6Ω, RGoff=1.5Ω, Tj= 125°C
350
300
Eoff
250
200
Eon
150
100
Err
50
0
0 200 400 600 800 1000 1200 1400
Collector current : Ic [ A ] , Forward current : IF [ A ]
1800
1600
1400
1200
1000
800
600
400
200
0
0
Reverse bias safe operating area (max.)
± VGE=15V ,Tj = 125°C / chip
200 400 600 800 1000 1200 1400
Collector - Emitter voltage : VCE [ V ]
3
Switching time vs. Gate resistance (typ.)
Vcc=600V, Ic=800A,VGE=±15V, Tj= 125°C
6.0
ton
5.0
4.0
3.0 tr
2.0 toff
1.0
0.0
0
tf
4 8 12 16 20 24 28
Gate resistance : RG [ Ω ]
700
600
500
400
300
200
100
0
0
Switching loss vs. Gate resistance (typ.)
Vcc=600V, Ic=800A,VGE=±15V, Tj= 125°C
Eon
Eoff
Err
4 8 12 16 20 24 28
Gate resistance : RG [ Ω ]

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2MBI800U4G-120
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
1800
1600
Forward current vs. Forward on voltage (typ.)
chip
Tj=25ºC Tj=125ºC
1400
1200
1000
800
600
400
200
0
0.0 1.0 2.0 3.0
Forward on voltage : VF [ V ]
4.0
0.100
0.010
Transient thermal resistance (max.)
FWD
IGBT
Reverse recovery characteristics (typ.)
Vcc=600V, VGE=±15V, RGon=5.6Ω, Tj=125°C
600
550
500
450
400
350
300
250
200
150
100
50
0
0
1.2
1.1
Irr 1.0
0.9
0.8
0.7
0.6
trr 0.5
0.4
0.3
0.2
0.1
0.0
200 400 600 800 1000 1200 1400
Forward current : IF [ A ]
0.001
0.001
0.010
0.100
Pulse width : PW [ sec ]
1.000
4

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2MBI800U4G-120
Outline Drawings, mm
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
Equivalent Circuit Schematic
main emitter
sense emitter
main collector
sense collector
gate
sense collector
gate
sense emitter
main collector main emitter
5