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Ordering number:EN3573
N-Channel Silicon MOSFET
2SK1435
Ultrahigh-Speed Switching Applications
Features
· Low ON-state resistance.
· Ultrahigh-speed switching.
· Converters.
· Micaless package facilitating easy mounting.
Package Dimensions
unit:mm
2076B
16.0
3.4
[2SK1435]
5.6
3.1
2.8
2.0
1.0
123
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Symbol
VDSS
VGSS
ID
IDP
Allowable Power Dissipation
PD
Channel Temperature
Storage Temperature
Tch
Tstg
5.45
Conditions
PW10µs, duty cycle1%
Tc=25°C
Electrical Characteristics at Ta = 25˚C
5.45
Parameter
Symbol
Conditions
Drain-to-Source Breakdown Voltage
V(BR)DSS ID=1mA, VGS=0
Zero-Gate Voltage Drain Current
IDSS VDS=100V, VGS=0
Gate-to-Source Leakage Current
IGSS VGS=±20V, VDS=0
Cutoff Voltage
VGS(off) VDS=10V, ID=1mA
Forward Transfer Admittance
| yfs | VDS=10V, ID=20A
Static Drain-to-Source ON-State Resistance
RDS(on) ID=20A, VGS=10V
(Note) Be careful in handling the 2SK1435 because it has no protection diode between gate and source.
2.0
0.6
1 : Gate
2 : Drain
3 : Source
SANYO : TO-3PML
Ratings
100
±20
30
120
60
3.0
150
–55 to +150
Unit
V
V
A
A
W
W
˚C
˚C
Ratings
min typ max
Unit
100 V
100 µA
±100 nA
1.5 2.5 V
13 22
S
0.040 0.055
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
52899TH (KT)/7151JN (KOTO) X-6618, 8035 No.3573–1/4

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Continued from preceding page.
Parameter
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Diode Forward Voltage
Switching Time Test Circuit
2SK1435
Symbol
Conditions
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VSD
VDS=20V, f=1MHz
VDS=20V, f=1MHz
VDS=20V, f=1MHz
ID=20A, VGS=10V, VDD=50V, RGS=50
ID=20A, VGS=10V, VDD=50V, RGS=50
ID=20A, VGS=10V, VDD=50V, RGS=50
ID=20A, VGS=10V, VDD=50V, RGS=50
IS=30A, VGS=0
Ratings
min typ max
Unit
2400
pF
700 pF
200 pF
30 ns
90 ns
320 ns
130 ns
1.8 V
No.3573–2/4

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2SK1435
No.3573–3/4