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Ordering number:EN3770A
Features
· Low ON resistance.
· Ultrahigh-speed switching.
· Low-voltage drive.
N-Channel Silicon MOSFET
2SK1469
Ultrahigh-Speed Switching Applications
Package Dimensions
unit:mm
2083B
[2SK1469]
6.5
5.0
4
2.3
0.5
unit:mm
2092B
0.85
0.7
0.6
123
2.3 2.3
1.2
0.5
1 : Gate
2 : Drain
3 : Source
SANYO : TP
[2SK1469]
6.5 2.3
5.0 0.5
4
0.85
1
0.6
2
3
2.3 2.3
0.5
1.2
0 to 0.2
1 : Gate
2 : Drain
3 : Source
SANYO : TP-FA
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
61599TH (KT)/71993TH (KOTO) 8-7921 No.3770–1/4

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2SK1469
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Symbol
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (pulse)
VDSS
VGSS
ID
IDP
Allowable Power Dissipation
PD
Channel Temperature
Storage Temperature
Tch
Tstg
Conditions
PW10µs, duty cycle1%
Tc=25°C
Electrical Characteristics at Ta = 25˚C
Parameter
Drain-to-Source Breakdown Voltage
Gate-to-Source Breakdown Voltage
Zero-Gate Votlage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Diode Forward Voltage
Symbol
Conditions
V(BR)DSS
V(BR)GSS
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VSD
ID=1mA, VGS=0
IG=±100µA, VDS=0
VDS=30V, VGS=0
VGS=±12V, VDS=0
VDS=10V, ID=1mA
VDS=10V, ID=4A
ID=4A, VGS=10V
ID=4A, VGS=4V
VDS=10V, f=1MHz
VDS=10V, f=1MHz
VDS=10V, f=1MHz
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
IS=8A, VGS=0
Switching Time Test Circuit
Ratings
30
±15
8
32
1.0
30
150
–55 to +150
Unit
V
V
A
A
W
W
˚C
˚C
Ratings
min typ
30
±15
1.0
58
40
55
1000
550
180
13
40
130
120
1.0
max
100
±10
2.0
55
75
1.5
Unit
V
V
µA
µA
V
S
m
m
pF
pF
pF
ns
ns
ns
ns
V
No.3770–2/4

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2SK1469
No.3770–3/4