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TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK118
General Purpose and Impedance Converter and
Condenser Microphone Applications
2SK118
Unit: mm
High breakdown voltage: VGDS = 50 V
High input impedance: IGSS = 1 nA (max) (VGS = 30 V)
Low noise: NF = 0.5dB (typ.) (RG = 100 k, f = 120 Hz)
Small package
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Gate-drain voltage
Gate current
Drain power dissipation
Junction temperature
Storage temperature range
VGDS
IG
PD
Tj
Tstg
50
10
100
125
55~125
V
mA
mW
°C
°C
Note:
Using continuously under heavy loads (e.g. the application of
JEDEC
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
JEITA
reliability significantly even if the operating conditions (i.e.
TOSHIBA
2-4E1B
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Weight: 0.13 g (typ.)
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and
individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min Typ. Max Unit
Gate cut-off current
Gate-drain breakdown voltage
Drain current
Gate-source cut-off voltage
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Noise figure
IGSS
VGS = −30 V, VDS = 0
V (BR) GDS VDS = 0, IG = −100 μA
IDSS
(Note)
VDS = 10 V, VGS = 0
VGS (OFF) VDS = 10 V, ID = 0.1 μA
Yfs
VDS = 10 V, VGS = 0, f = 1 kHz
Ciss VDS = 10 V, VGS = 0, f = 1 MHz
Crss
VGD = −10 V, ID = 0, f = 1 MHz
NF
VDS = 15 V, VGS = 0, RG = 100 kΩ,
f = 120 Hz
⎯ ⎯ −1.0 nA
50
V
0.3 6.5 mA
0.4 ⎯ −5.0 V
1.2
mS
8.2 pF
2.6 pF
0.5 5.0 dB
Note: IDSS classification R: 0.3~0.75 mA, O: 0.6~1.4 mA, Y: 1.2~3.0 mA, GR: 2.6~6.5 mA
1 2007-11-01

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