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Ordering number:EN3440
Features
· Low ON-state resistance.
· Ultrahigh-speed switching.
N-Channel Silicon MOSFET
2SK1053
Ultrahigh-Speed Switching Applications
Package Dimensions
unit:mm
2052C
[2SK1053]
10.2
3.6 5.1
4.5
1.3
1.2
0.8
123
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Symbol
VDSS
VGSS
ID
IDP
Allowable Power Dissipation
PD
Channel Temperature
Storage Temperature
Tch
Tstg
2.55
Conditions
PW10µs, duty cycle1%
Tc=25°C
Electrical Characteristics at Ta = 25˚C
2.55
Parameter
Symbol
Conditions
Drain-to-Source Breakdown Voltage
V(BR)DSS ID=1mA, VGS=0
Zero-Gate Voltage Drain Current
IDSS VDS=450V, VGS=0
Gate-to-Source Leakage Current
IGSS VGS=±30V, VDS=0
Cutoff Voltage
VGS(off) VDS=10V, ID=1mA
Forward Transfer Admittance
| yfs | VDS=10V, ID=0.5A
Static Drain-to-Source ON-State Resistance
RDS(on) ID=0.5A, VGS=10V
(Note) Be careful in handling the 2SK1053 because it has no protection diode between gate and source.
1 : Gate
0.4
2 : Drain
3 : Source
EIAJ : SC-46
SANYO : TO-220AB
Ratings
450
±30
1.0
4.0
40
1.75
150
–55 to +150
Unit
V
V
A
A
W
W
˚C
˚C
Ratings
min typ max
Unit
450 V
1.0 mA
±100 nA
2.0 3.0 V
0.6 1.2
S
3.5 4.5
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
51099TH (KT)/2011JN (KOTO) X-6827, 8035 No.3440–1/4

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Continued from preceding page.
Parameter
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Diode Forward Voltage
2SK1053
Symbol
Conditions
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VSD
VDS=20V, f=1MHz
VDS=20V, f=1MHz
VDS=20V, f=1MHz
ID=0.5A, VGS=10V, VDD=200V, RGS=50
ID=0.5A, VGS=10V, VDD=200V, RGS=50
ID=0.5A, VGS=10V, VDD=200V, RGS=50
ID=0.5A, VGS=10V, VDD=200V, RGS=50
IS=1.0A, VGS=0
Switching Time Test Circuit
Ratings
min typ max
Unit
250 pF
40 pF
8.0 pF
10 ns
9 ns
45 ns
50 ns
1.8 V
No.3440–2/4

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2SK1053
No.3440–3/4