K1061.pdf 데이터시트 (총 5 페이지) - 파일 다운로드 K1061 데이타시트 다운로드

No Preview Available !

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
2SK1061
High Speed Switching Applications
Analog Switch Applications
Interface Applications
2SK1061
Unit: mm
Excellent switching times: ton = 14 ns (typ.)
High forward transfer admittance: |Yfs| = 100 mS (min)
Low on resistance: RDS (ON) = 0.6 (typ.)
Enhancement-mode
Complementary to 2SJ167
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDS 60 V
Gate-source voltage
VGSS ±20 V
Drain current
DC
Pulse
Drain power dissipation (Ta = 25°C)
Channel temperature
Storage temperature range
ID
IDP
PD
Tch
Tstg
200
800
300
150
55~150
mA
mW
°C
°C
JEDEC
JEITA
TOSHIBA
2-4E1E
Note: Using continuously under heavy loads (e.g. the application of high
Weight: 0.13 g (typ.)
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1 2007-11-01

No Preview Available !

Electrical Characteristics (Ta = 25°C)
Characteristics
Gate leakage current
Drain cut-off current
Drain-source breakdown voltage
Gate threshold voltage
Forward transfer admittance
Drain-source ON resistance
Drain-source ON voltage
Input capacitance
Reverse transfer capacitance
Output capacitance
Symbol
Test Condition
IGSS
IDSS
V (BR) DSS
Vth
Yfs
RDS (ON)
VDS (ON)
Ciss
Crss
Coss
VGS = ±10 V, VDS = 0
VDS = 60 V, VGS = 0
ID = 1 mA, VGS = 0
VDS = 10 V, ID = 1 mA
VDS = 10 V, ID = 50 mA
ID = 50 mA, VGS = 10 V
ID = 50 mA, VGS = 10 V
VDS = 10 V, VGS = 0, f = 1 MHz
Rise time
tr
2SK1061
Min Typ. Max Unit
⎯ ⎯ ±100 nA
⎯ ⎯ 10 μA
60 ⎯ ⎯
V
2 3.5 V
100
mS
0.6 1.0 Ω
30 50 mV
55 65 pF
13 18 pF
40 50 pF
8
Switching time
Turn-on time
ton
14
ns
Fall time
Turn-off Time
tf
D.U. <= 1%
toff VIN: tr, tf < 5 ns
(Zout = 50 Ω)
35
75
Note: This transistor is the electrostatic sensitive device. Please handle with caution.
2 2007-11-01

No Preview Available !

2SK1061
3 2007-11-01