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Ordering number:ENN2048B
PNP/NPN Epitaxial Planar Silicon Transistors
2SB1168/2SD1725
Large Current Switching Applications
Features
· Relay drivers, high-speed inverters, converters.
Features
· Low collector-to-emitter saturation voltage.
· High fT.
· Excellent linearity of hFE.
· Short switching time.
Package Dimensions
unit:mm
2043B
[2SB1168/2SD1725]
8.0
4.0
2.0
2.7
1.6
0.8
0.8
0.6 0.5
Specifications
( ) : 2SB1168
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Symbol
VCBO
VCEO
VEBO
IC
ICP
Collector Dissipation
PC
Junction Temperature
Tj
Storage Temperature
Tstg
Electrical Characteristics at Ta = 25˚C
Tc=25˚C
12 3
2.4
4.8
Conditions
Parameter
Symbol
Conditions
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
ICBO
IEBO
hFE1
hFE2
VCB=(–)100V, IE=0
VEB=(–)4V, IC=0
VCE=(–)5V, IC=(–)0.5A
VCE=(–)5V, IC=(–)3A
Gain-Bandwidth Product
fT VCE=(–)10V, IC=(–)0.5A
* : The 2SB1168/2SD1725 are classified by 0.5A hFE as follows :
Rank
Q
R
S
T
hFE 70 to 140 100 to 200 140 to 280 200 to 400
1 : Emitter
2 : Collector
3 : Base
SANYO : TO-126LP
Ratings
(–)120
(–)100
(–)6
(–)4
(–)8
1.2
20
150
–55 to +150
Unit
V
V
V
A
A
W
W
˚C
˚C
Ratings
min typ max
Unit
(–)1 µA
(–)1 µA
70* 400*
40
(130)
MHz
180 MHz
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
20701TS TA-3150, 3153/92098HA (KT)/4137KI/D176TA, TS No.2048–1/5

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2SB1168/2SD1725
Continued from preceding page.
Parameter
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
Symbol
Conditions
Cob VCB=(–)10V, f=1MHz
VCE(sat) IC=(–)2A, IB=(–)0.2A
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
IC=(–)2A, IB=(–)0.2A
IC=(–)10µA, IE=0
IC=(–)1mA, RBE=
IE=(–)10µA, IC=0
ton
See specified Test Circuit
tstg
tf
Switching Time Test Circuit
PW=20µs
D.C.1%
IB1
IB2
INPUT
VR
RB
OUTPUT
RL
50
++
100µF
470µF
VBE= --5V
VCC=50V
IC=10IB1= --10IB2=2A
For PNP, the polarity is reversed.
Ratings
min typ
40(65)
(–200)
150
(–)0.9
(–)120
(–)100
(–)6
(100)
100
900
(800)
50(50)
max
(–500)
400
(–)1.2
Unit
pF
mV
mV
V
V
V
V
ns
ns
ns
ns
ns
--5
2SB1168
From top
--100mA
--4 --90mA
--80mA
--70mA
--3 --60mA
--50mA
IC -- VCE
--40mA
--30mA
--20mA
--2
--10mA
--1
0
0
--2.0
--1.6
--1.2
--0.8
--0.4
0
0
--5mA
--2mA
IB=0
--1 --2 --3 --4 --5
Collector-to-Emitter Voltage, VCE – V ITR09128
IC -- VCE
2SB1168
--10-m-9AmA
--8mA
--7mA
--6mA
--5mA
--4mA
--3mA
--2mA
--1mA
IB=0
--10 --20 --30 --40 --50
Collector-to-Emitter Voltage, VCE – V ITR09130
5
2SD1725
From top
60mA
4 50mA
40mA
3
2
IC -- VCE
90mA
80mA
100mA
70mA
30mA
20mA
10mA
5mA
1
2mA
0 IB=0
012345
Collector-to-Emitter Voltage, VCE – V ITR09129
2.0
8mA
IC -- VCE
2SD1725
1.6 7mA
6mA
1.2 5mA
4mA
0.8 3mA
2mA
0.4
1mA
0 IB=0
0 10 20 30 40 50
Collector-to-Emitter Voltage, VCE – V ITR09131
No.2048–2/5

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2SB1168/2SD1725
IC -- VBE
--5
2SB1168
IC -- VBE
5
2SD1725
VCE= --5V
VCE=5V
--4 4
--3 3
--2 2
--1
0
0
1000
7
5
3
2
100
7
5
3
2
--0.2
--0.4
--0.6
--0.8
--1.0
--1.2
Base-to-Emitter Voltage, VBE – V ITR09132
hFE -- IC
2SB1168
VCE= --5V
Ta=75°C
25°C
--25°C
10
7
5
5 --0.01 2 3 5 --0.1 2 3 5 --1.0 2 3 5 --10
Collector Current, IC – A
ITR09134
f T -- IC
5
2SB1168 / 2SD1725
3 VCE=10V
2 2SD1725
100 2SB1168
7
5
3
2
(For PNP, minus sign is omitted.)
10
2 3 5 7 0.1
2 3 5 7 1.0
23 5
Collector Current, IC – A
ITR09136
VCE(sat) -- IC
5
2SB1168
3 IC / IB=10
2
--1000
5
3
2
--100
5
3
2
25°C
Ta=75°C
--25°C
--10
5 --0.01 2 3 5 --0.1 2 3 5 --1.0 2 3 5 --10
Collector Current, IC – A
ITR09138
1
0
0
1000
7
5
3
2
100
7
5
3
2
0.2 0.4 0.6 0.8 1.0 1.2
Base-to-Emitter Voltage, VBE – V ITR09133
hFE -- IC
2SD1725
VCE=5V
Ta=75°C
25°C
--25°C
10
7
5
5 0.01 2 3 5 0.1 2 3 5 1.0 2 3 5 10
Collector Current, IC – A
ITR09135
Cob -- VCB
3
2SB1168 / 2SD1725
2 f=1MHz
100
7
5
2S2DS1B7121568
3
2
10
7
(For PNP, minus sign is omitted.)
5
5 7 1.0
2 3 5 7 10
2 3 5 7 100 2
Collector-to-Base Voltage, VCB -- V ITR09137
VCE(sat) -- IC
5
2SD1725
3 IC / IB=10
2
1000
7
5
3
2
100
7
5
3
2
10
5
Ta=75°C
25°C
--25°C
0.01 2 3 5 0.1 2 3 5 1.0 2 3 5 10
Collector Current, IC – A
ITR09139
No.2048–3/5