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TOSHIBA Transistor Silicon PNP Epitaxial Type
2SB1016A
Power Amplifier Applications
2SB1016A
Unit: mm
High breakdown voltage: VCEO = 100 V
Low collector-emitter saturation voltage: VCE (sat) = 2.0 V (max)
Complementary to 2SD1407A
Absolute Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
100
V
Collector-emitter voltage
VCEO
100
V
Emitter-base voltage
VEBO 5 V
Collector current
IC 5 A
Base current
IB
0.5
A
Collector power dissipation
(Tc = 25°C)
PC 30 W
JEDEC
Junction temperature
Storage temperature range
Tj 150 °C
Tstg
55 to 150
°C
JEITA
TOSHIBA
2-10R1A
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
Weight: 1.7 g (typ.)
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
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Electrical Characteristics (Tc = 25°C)
Characteristics
Symbol
Test Condition
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
ICBO
VCB = 100 V, IE = 0
IEBO
VEB = 5 V, IC = 0
V (BR) CEO IC = 50 mA, IB = 0
hFE (1)
(Note)
VCE = 5 V, IC = 1 A
hFE (2)
VCE (sat)
VCE = 5 V, IC = 4 A
IC = 4 A, IB = 0.4 A
VBE VCE = 5 V, IC = 4 A
fT VCE = 5 V, IC = 1 A
Cob VCB = 10 V, IE = 0, f = 1 MHz
Note: hFE (1) classification O: 70 to 140, Y: 120 to 240
Marking
2SB1016A
Min Typ. Max Unit
― ― −100 μA
― ― −1 mA
100
V
70 240
20 ― ―
― ― −2.0 V
― ― −1.5 V
5 MHz
270
pF
B1016A
Characteristics
indicator
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
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5
250
4
IC – VCE
200
150
100
3 50
2
IB = 20 mA
1
Common emitter
Tc = 25°C
0
0 1 2 3 4 5 6 7
Collector-emitter voltage VCE (V)
2SB1016A
IC – VBE
5
Common emitter
VCE = 5 V
4
3
Tc = 75°C
25
2
25
1
0
0 0.4 0.8 1.2 1.6 2.0 2.4 2.8
Base-emitter voltage VBE (V)
hFE – IC
500
300
Tc = 75°C
100 25
25
50
30
Common emitter
10 VCE = 5 V
5
0.01
0.03
0.1
0.3
1
Collector current IC (A)
3 5
VCE (sat) – IC
3
Common emitter
IC/IB = 10
1
0.5
0.3
0.1
0.05
0.03
0.01
Tc = 75°C
25
25
0.03
0.1
0.3
1
Collector current IC (A)
3 5
PC – Ta
50
Tc = Ta
Infinite heat sink
40
30
20
10
0
0 25 50 75 100 125 150
Ambient temperature Ta (°C)
Safe Operating Area
20
10 IC max (pulsed)*
5 IC max (continuous)
3
DC operation
Tc = 25°C
1 s*
1 ms*
10 ms*
100 ms*
1
*: Single nonrepetitive
0.5 pulse Tc = 25°C
Curves must be derated
linearly with increase in
temperature.
0.2
3
10
VCEO max
30 100
Collector-emitter voltage VCE (V)
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2SB1016A
RESTRICTIONS ON PRODUCT USE
The information contained herein is subject to change without notice.
20070701-EN
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
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