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TOSHIBA Transistor Silicon PNP Epitaxial Type
2SB1016A
Power Amplifier Applications
2SB1016A
Unit: mm
High breakdown voltage: VCEO = 100 V
Low collector-emitter saturation voltage: VCE (sat) = 2.0 V (max)
Complementary to 2SD1407A
Absolute Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
100
V
Collector-emitter voltage
VCEO
100
V
Emitter-base voltage
VEBO 5 V
Collector current
IC 5 A
Base current
IB
0.5
A
Collector power dissipation
(Tc = 25°C)
PC 30 W
JEDEC
Junction temperature
Storage temperature range
Tj 150 °C
Tstg
55 to 150
°C
JEITA
TOSHIBA
2-10R1A
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
Weight: 1.7 g (typ.)
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
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Electrical Characteristics (Tc = 25°C)
Characteristics
Symbol
Test Condition
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
ICBO
VCB = 100 V, IE = 0
IEBO
VEB = 5 V, IC = 0
V (BR) CEO IC = 50 mA, IB = 0
hFE (1)
(Note)
VCE = 5 V, IC = 1 A
hFE (2)
VCE (sat)
VCE = 5 V, IC = 4 A
IC = 4 A, IB = 0.4 A
VBE VCE = 5 V, IC = 4 A
fT VCE = 5 V, IC = 1 A
Cob VCB = 10 V, IE = 0, f = 1 MHz
Note: hFE (1) classification O: 70 to 140, Y: 120 to 240
Marking
2SB1016A
Min Typ. Max Unit
― ― −100 μA
― ― −1 mA
100
V
70 240
20 ― ―
― ― −2.0 V
― ― −1.5 V
5 MHz
270
pF
B1016A
Characteristics
indicator
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
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5
250
4
IC – VCE
200
150
100
3 50
2
IB = 20 mA
1
Common emitter
Tc = 25°C
0
0 1 2 3 4 5 6 7
Collector-emitter voltage VCE (V)
2SB1016A
IC – VBE
5
Common emitter
VCE = 5 V
4
3
Tc = 75°C
25
2
25
1
0
0 0.4 0.8 1.2 1.6 2.0 2.4 2.8
Base-emitter voltage VBE (V)
hFE – IC
500
300
Tc = 75°C
100 25
25
50
30
Common emitter
10 VCE = 5 V
5
0.01
0.03
0.1
0.3
1
Collector current IC (A)
3 5
VCE (sat) – IC
3
Common emitter
IC/IB = 10
1
0.5
0.3
0.1
0.05
0.03
0.01
Tc = 75°C
25
25
0.03
0.1
0.3
1
Collector current IC (A)
3 5
PC – Ta
50
Tc = Ta
Infinite heat sink
40
30
20
10
0
0 25 50 75 100 125 150
Ambient temperature Ta (°C)
Safe Operating Area
20
10 IC max (pulsed)*
5 IC max (continuous)
3
DC operation
Tc = 25°C
1 s*
1 ms*
10 ms*
100 ms*
1
*: Single nonrepetitive
0.5 pulse Tc = 25°C
Curves must be derated
linearly with increase in
temperature.
0.2
3
10
VCEO max
30 100
Collector-emitter voltage VCE (V)
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