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2SB1067
TOSHIBA Transistor Silicon PNP Epitaxial Type (Darlington Power Transistor)
2SB1067
Micro-Moter Drive, Hammer Drive Applications
Switching Applications
Power Amplifier Applications
Industrial Applications
Unit: mm
High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)
Low saturation voltage: VCE (sat) = 1.5 V (max)
(IC = 1 A, IB = 1 mA)
Absolute Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power
dissipation
Ta = 25°C
Tc = 25°C
Junction temperature
Storage temperature range
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
80
80
8
2
0.5
1.5
10
150
55 to 150
V
V
V
A
A
W
°C
°C
JEDEC
JEITA
TOSHIBA
2-8H1A
Weight: 0.82 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Equivalent Circuit
COLLECTOR
BASE
4 k
800
EMITTER
1 2006-11-21

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Electrical Characteristics (Tc = 25°C)
2SB1067
Characteristics
Collector cut-off current
Emitter cut-off current
Collector-emitte breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
Test Condition
ICBO
IEBO
V (BR) CEO
hFE
VCE (sat)
VBE (sat)
fT
Cob
VCB = 80 V, IE = 0
VEB = 8 V, IC = 0
IC = 10 mA, IB = 0
VCE = 2 V, IC = 1 A
IC = 1 A, IB = 1 mA
IC = 1 A, IB = 1 mA
VCE = 2 V, IC = 0.5 A
VCB = 10 V, IE = 0, f = 1 MHz
Min Typ. Max Unit
― ― −10 μA
― ― −4 mA
80
V
2000
― ― −1.5 V
― ― −2.0 V
50 MHz
30 pF
Turn-on time
ton
20 μs
Input
IB2
Output 0.4
Switching time Storage time
Fall time
tstg
IB1
2.0
μs
VCC = 30 V
tf
IB1 = IB2 = 1 mA, duty cycle 1%
0.4
Marking
Lot No.
B1067
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Part No. (or abbreviation code)
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1000
800
1.6
600
IC – VCE
500
Common emitter
Tc = 25°C
400
0.8
300
IB = 200 μA
0
0
2 4
6 8
Collector-emitter voltage VCE (V)
VCE (sat) – IC
3
Common emitter
IC/IB = 1000
1
0.5
Tc = 55°C
0.3
25
100
1
3
Collector current IC (A)
2SB1067
10000
5000
3000
Common emitter
VCE = 2 V
hFE – IC
1000
500
300
Tc = 100°C 25
55
100
50
30
0.01
0.03
0.1
0.3
1
Collector current IC (A)
3
VBE (sat) – IC
5
Common emitter
IC/IB = 1000
3
Tc = 55°C
25
100
1
0.3
1
3
Collector current IC (A)
IC – VBE
1.6
Common emitter
VCE = 2 V
0.8
Tc = 100°C
55
25
0
0
0.8
1.6
2.4
3.2
Base-emitter voltage VBE (V)
12
(1)
8
PC – Ta
(1) Tc = Ta Infinite heat sink
(2) No heat sink
4
(2)
0
0 40 80 120 160 200 240
Ambient temperature Ta (°C)
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