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Ordering number:1787A
PNP/NPN Epitaxial Planar Silicon Transistors
2SB1121/2SD1621
High-Current Driver Applications
Applications
· Voltage regulators, relay drivers, lamp drivers,
electrical equipment.
Package Dimensions
unit:mm
2038
Features
· Adoption of FBET, MBIT processes.
· Low collector-to-emitter saturation voltage.
· Large current capacity and wide ASO.
· Fast switching speed.
· Very small size making it easy to provide high-
density, small-sized hybrid IC’s.
[2SB1121/2SD1621]
E : Emitter
C : Collector
B : Base
( ) : 2SB1121
Specifications
SANYO : PCP
(Bottom view)
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Conditions
Mounted on ceramic board (250mm2×0.8mm)
Ratings
(–)30
(–)25
(–)6
(–)2
(–)5
500
1.3
150
–55 to +150
Unit
V
V
V
A
A
mW
W
˚C
˚C
Electrical Characteristics at Ta = 25˚C
Parameter
Symbol
Conditions
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
ICBO
IEBO
hFE1
hFE2
fT
VCB=(–)20V, IE=0
VEB=(–)4V, IC=0
VCE=(–)2V, IC=(–)100mA
VCE=(–)2V, IC=(–)1.5A
VCE=(–)10V, IC=(–)50mA
* ; The 2SB1121/2SD1621 are classified by 100mA hFE as follows :
100 R 200 140 S 280 200 T 400 280 U 560
Ratings
min typ
100*
65
150
max
(–)0.1
(–)0.1
560*
Unit
µA
µA
MHz
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
92098HA (KT)/4107KI/3045MW, TS No.1787–1/4

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Parameter
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Output Capacitance
Turn-ON Time
Storage Time
Fall Time
Switching Time Test Circuit
2SB1121/2SD1621
Symbol
Conditions
VCE(sat) IC=(–)1.5A, IB=(–)75mA
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
Cob
IC=(–)1.5A, IB=(–)75mA
IC=(–)10µA, IE=0
IC=(–)1mA, RBE=
IE=(–)10µA, IC=0
VCB=(–)10V, f=1MHz
ton See specified Test Circuit.
tstg See specified Test Circuit.
tf See specified Test Circuit.
Ratings
min typ
0.18
(–0.35)
(–)0.85
(–)30
(–)25
(–)6
19
(32)
60
(60)
500
(350)
25
(25)
max
0.4
(–0.6)
(–)1.2
Unit
V
V
V
V
V
V
pF
pF
ns
ns
ns
ns
ns
ns
No.1787–2/4

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2SB1121/2SD1621
No.1787–3/4