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Ordering number : ENN1727D
2SB1123 / 2SD1623
PNP / NPN Epitaxial Planar Silicon Transistors
2SB1123 / 2SD1623
High-Current Switching Applications
Applications
Voltage regulators, relay drivers, lamp drivers,
electrical equipment.
Package Dimensions
unit : mm
2038A
Features
Adoption of FBET, MBIT processes.
Low collector-to-emitter saturation voltage.
Large current capacity and wide ASO.
Fast switching speed.
The ultraminiature package facilitates
higher-density mounting, thus allows the applied
hybrid IC’s further miniaturization.
Specifications
( ) : 2SB1123
Absolute Maximum Ratings at Ta=25°C
[2SB1123 / 2SD1623]
4.5
1.6 1.5
0.4 0.5
3 1.5 2
3.0
1
0.75
0.4
1 : Base
2 : Collector
3 : Emitter
SANYO : PCP
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Symbol
VCBO
VCEO
VEBO
IC
ICP
Collector Dissipation
PC
Junction Temperature
Storage Temperature
Tj
Tstg
Electrical Characteristics at Ta=25°C
Conditions
Mounted on a ceramic board (250mm2!0.8mm)
Ratings
(--)60
(--)50
(--)6
(--)2
(--)4
0.5
1.3
150
--55 to +150
Unit
V
V
V
A
A
W
W
°C
°C
Parameter
Symbol
Conditions
Collector Cutoff Current
ICBO
VCB=(--)50V, IE=0
Emitter Cutoff Current
IEBO
VEB=(--)4V, IC=0
DC Current Gain
hFE(1)
hFE(2)
VCE=(--)2V, IC=(--)100mA
VCE=(--)2V, IC=(--)1.5A
* : The 2SB1123 / 2SD1623 are classified by 100mA hFE as follows :
Rank
R
S
T
U
hFE 100 to 200 140 to 280 200 to 400 280 to 560
Marking 2SB1123 : BF
2SD1623 : DF
min
100*
40
Ratings
typ
max
(--)100
(--)100
560*
Unit
nA
nA
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
N1501 TS IM / 92098 HA (KT) / 4107 KI / N275 KI / 3045 MW, TS No.1727-1/5

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2SB1123 / 2SD1623
Continued from preceding page.
Parameter
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
Symbol
Conditions
fT
Cob
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
ton
tstg
tf
VCE=(--)10V, IC=(--)50mA
VCB=(--)10V, f=1MHz
IC=(--)1A, IB=(--)50mA
IC=(--)1A, IB=(--)50mA
IC=(--)10µA, IE=0
IC=(--)1mA, RBE=
IE=(--)10µA, IC=0
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
Switching Time Test Circuit
PW=20µs
D.C.1%
INPUT
VR
IB1
RB
IB2
OUTPUT
RL=50
50
++
100µF
470µF
--5V 25V
10IB1= --10IB2=IC=500mA
(For PNP, the polarity is reversed)
Ratings
min typ
150
(22)12
(--0.3)0.15
(--)0.9
(--)60
(--)50
(--)6
(60)60
(450)550
(30)30
max
(--0.7)0.4
(--)1.2
Unit
MHz
pF
V
V
V
V
V
ns
ns
ns
--2.4
--2.0
--1.6
--1.2
--0.8
--0.4
0
0
--1200
--1000
--800
--600
--400
--200
0
0
IC -- VCE
--50mA
--20mA
2SB1123
Pulse
--10mA
--8mA
--6mA
--4mA
--2mA
IB=0
--0.4
--0.8
--1.2
--1.6
--2.0
--2.4
Collector-to-Emitter Voltage, VCE -- V ITR08891
IC -- VCE
--7mA
--6mA
2SB1123
Pulse
--5mA
--4mA
--3mA
--2mA
--1mA
IB=0
--2 --4 --6 --8 --10 --12
Collector-to-Emitter Voltage, VCE -- V ITR08893
2.4
2.0
1.6
1.2
0.8
0.4
0
0
1200
1000
800
600
400
200
0
0
50mA
IC -- VCE
40mA
25mA
2SD1623
Pulse
15mA
8mA
4mA
2mA
IB=0
0.4 0.8 1.2 1.6 2.0 2.4
Collector-to-Emitter Voltage, VCE -- V ITR08892
IC -- VCE
7mA
6mA
2SD1623
Pulse
5mA
4mA
3mA
2mA
1mA
IB=0
2 4 6 8 10 12
Collector-to-Emitter Voltage, VCE -- V ITR08894
No.1727-2/5

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2SB1123 / 2SD1623
--1200
--1000
IC -- VBE
2SB1123
VCE= --2V
1200
1000
IC -- VBE
2SD1623
VCE=2V
--800
800
--600
600
--400
400
--200
0
0
1000
7
5
3
2
--0.2
--0.4
--0.6
--0.8
--1.0
--1.2
Base-to-Emitter Voltage, VBE -- V ITR08895
hFE -- IC
2SB1123
VCE= --2V
100
7
5
3
2
10
--10
1000
7
5
2 3 5 7 --100 2 3 5 7 --1000 2 3 5
Collector Current, IC -- mA
f T -- IC
ITR08897
2SB1123
VCB=10V
3
2
100
7
5
3
2
10
--10
2
100
7
5
2 3 5 7 --100 2 3 5 7--1000 2 3
Collector Current, IC -- mA
Cob -- VCB
ITR08899
2SB1123
f=1MHz
3
2
10
7
5
--1.0
23
5 7 --10
23
5 7 --100
Collector-to-Base Voltage, VCB -- V ITR08901
200
0
0
1000
7
5
3
2
0.2 0.4 0.6 0.8 1.0 1.2
Base-to-Emitter Voltage, VBE -- V ITR08896
hFE -- IC
2SD1623
VCE=2V
100
7
5
3
2
10
10
1000
7
5
3
2
23
5 7 100 2 3 5 7 1000
Collector Current, IC -- mA
f T -- IC
23 5
ITR08898
2SD1623
VCB=10V
100
7
5
3
2
10
10
100
7
5
2 3 5 7 100
2 3 5 7 1000 2 3
Collector Current, IC -- mA
Cob -- VCB
ITR08900
2SD1623
f=1MHz
3
2
10
7
5
1.0
23
5 7 10
23
5 7 100
Collector-to-Base Voltage, VCB -- V ITR08902
No.1727-3/5