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Ordering number:2017A
PNP/NPN Epitaxial Planar Silicon Transistors
2SB1125/2SD1625
Driver Applications
Applications
· Motor drivers, printer hammer drivers, relay drivers,
voltage regulator control.
Features
· High DC current gain.
· Large current capacity and wide ASO.
· Very small size making it easy to provide high-
density, small-sized hybrid IC’.
Package Dimensions
unit:mm
2038
[2SB1125/2SD1625]
( ) : 2SB1125
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Junction Temperature
Storage Temperature
Tj
Tstg
Electrical Characteristics at Ta = 25˚C
Conditions
Mounted on ceramic board (250mm2×0.8mm)
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Symbol
Conditions
ICBO
IEBO
hFE1
hFE2
VCB=(–)40V, IE=0
VEB=(–)8V, IC=0
VCE=(–)2V, IC=(–)50mA
VCE=(–)2V, IC=(–)500mA
Gain-Bandwidth Product
fT VCE=(–)5V, IC=(–)50mA
E : Emitter
C : Collector
B : Base
SANYO : PCP
(Bottom view)
Ratings
(–)80
(–)50
(–)10
(–)0.7
(–)2
500
1.3
150
–55 to +150
Unit
V
V
V
A
A
mW
W
˚C
˚C
Ratings
min typ
5000
4000
(3000)
200
(170)
max
(–)100
(–)100
Unit
nA
nA
MHz
MHz
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
92098HA (KT)/4027AT, TS No.2017–1/4

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Parameter
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
2SB1125/2SD1625
Symbol
Conditions
Cob VCB=(–)10V, f=1MHz
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
IC=(–)100mA, IB=(–)0.1mA
IC=(–)100mA, IB=(–)0.1mA
IC=(–)10µA, IE=0
IC=(–)1mA, RBE=
IE=(–)10µA, IC=0
Electrical Connection
Ratings
min typ
9
(18)
(–)0.8
(–)1.3
(–)80
(–)50
(–)10
max
(–)1.2
(–)2.0
Unit
pF
pF
V
V
V
V
V
No.2017–2/4

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2SB1125/2SD1625
No.2017–3/4