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Ordering number:2420B
PNP Epitaxial Planar Silicon Transistor
2SB1131
Strobe, High-Current Switching Applications
Applications
· Strobes, power supplies, relay drivers, lamp drivers.
Features
· Adoption of FBET, MBIT processes.
· Low saturation voltage.
· Large current capacity.
· Fast switching time.
Package Dimensions
unit:mm
2006A
[2SB1131]
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Electrical Characteristics at Ta = 25˚C
Conditions
Parameter
Symbol
Conditions
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
ICBO
IEBO
hFE1
hFE2
fT
VCE(sat)
VBE(sat)
VCB=–20V, IE=0
VEB=–4V, IC=0
VCE=–2V, IC=–500mA
VCE=–2V, IC=–4A
VCE=–5V, IC=–200mA
IC=–3A, IB=–60mA
IC=–3A, IB=–60mA
* : The 2SB1131 is classified by 500mA hFE as follows :
100 R 200 140 S 280 200 T 400
EIAJ : SC-51
SANYO : MP
B : Base
C : Collector
E : Emitter
Ratings
–25
–20
–5
–5
–8
1
150
–55 to +150
Unit
V
V
V
A
A
W
˚C
˚C
Ratings
min typ
100*
60
320
–250
–1.0
max
–500
–500
400*
–500
–1.3
Unit
nA
nA
MHz
mV
V
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
92098HA (KT)/8270MH/5217TA, TS No.2420–1/4

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Parameter
Output Capacitance
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
Switching Time Test Circuit
2SB1131
Symbol
Conditions
Cob
V(BR)CBO
V(BR)CEO
V(BR)EBO
ton
tstg
tf
VCB=–10V, f=1MHz
IC=(–)10µA, IE=0
IC=(–)1mA, RBE=
IE=(–)10µA, IC=0
See specified Test Circuti.
See specified Test Circuit.
See specified Test Circuit.
Ratings
min typ
60
–25
–20
–5
40
200
10
max
Unit
pF
V
V
V
ns
ns
ns
No.2420–2/4

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2SB1131
No.2420–3/4