B1141.pdf 데이터시트 (총 4 페이지) - 파일 다운로드 B1141 데이타시트 다운로드

No Preview Available !

Ordering number:2020A
PNP/NPN Epitaxial Planar Silicon Transistors
2SB1141/2SD1681
18V/1.2A Switching Applications
Applications
· Converters, relay drivers, low-voltage and high
power AF Amplifier.
Features
· Low saturation voltage and excellent linearity of hFE.
· Wide ASO.
Package Dimensions
unit:mm
2042A
[2SB1141/2SD1681]
( ) : 2SB1141
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Junction Temperature
Storage Temperature
Tj
Tstg
Electrical Characteristics at Ta = 25˚C
Tc=25˚C
Conditions
Parameter
Symbol
Conditions
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
ICBO
IEBO
hFE1
hFE2
fT
Cob
VCB=(–)15V, IE=0
VEB=(–)4V, IC=0
VCE=(–)2V, IC=(–)100mA
VCE=(–)2V, IC=(–)1A
VCE=(–)10V, IC=(–)50mA
VCB=(–)10V, f=1MHz
* : The 2SB1141/2SD1681 are classified by 100mA hFE as follows :
70 Q 140 100 R 200 140 S 280
200 T 400
B : Base
C : Collector
E : Emitter
SANYO :TO-126ML
Ratings
(–)20
(–)18
(–)5
(–)1.2
(–)2.0
1.5
10
150
–55 to +125
Unit
V
V
V
A
A
W
W
˚C
˚C
Ratings
min typ
70*
40
150
(30)20
max
(–)100
(–)100
400*
Unit
nA
nA
MHz
pF
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
92098HA (KT)/4107KI/4046KI No.2020–1/4

No Preview Available !

Parameter
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
2SB1141/2SD1681
Symbol
Conditions
VCE(sat) IC=(–)500mA, IB=(–)50mA
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
ton
tstg
IC=(–)500mA, IB=(–)50mA
IC=(–)10µA, IE=0
IC=(–)1mA, RBE=
IE=(–)10µA, IC=0
See specified Test Circuit
See specified Test Circuit
tf See specified Test Circuit
Switching Time Test Circuit
Ratings
min typ
(–170)
120
(–)0.85
(–)20
(–)18
(–)5
50
(60)
200
70
max
(–400)
300
(–)1.2
Unit
mV
mV
V
V
V
V
ns
ns
ns
ns
No.2020–2/4

No Preview Available !

2SB1141/2SD1681
No.2020–3/4