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Ordering number:2046A
PNP/NPN Epitaxial Planar Silicon Transistors
2SB1165/2SD1722
50V/5A Switching Applications
Applications
· Relay drivers, high-speed inverters, converters.
Features
· Low collector-to-emitter saturation voltage.
· High fT.
· Excellent linearity of hFE.
· Fast switching time.
Package Dimensions
unit:mm
2043A
[2SB1165/2SD1722]
( ) : 2SB1165
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Junction Temperature
Storage Temperature
Tj
Tstg
Electrical Characteristics at Ta = 25˚C
Tc=25˚C
Conditions
Parameter
Symbol
Conditions
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
ICBO
IEBO
hFE1
hFE2
fT
VCB=(–)40V, IE=0
VEB=(–)4V, IC=0
VCE=(–)2V, IC=(–)0.5A
VCE=(–)2V, IC=(–)4A
VCE=(–)5V, IC=(–)1A
Output Capacitance
Cob VCB=(–)10V, f=1MHz
* : The 2SB1165/2SD1722 are classified by 0.5A hFE as follows :
70 Q 140
100 R 200
B : Base
C : Collector
E : Emitter
SANYO : TO-126LP
Ratings
(–)60
(–)50
(–)6
(–)5
(–)8
1.2
20
150
–55 to +150
Unit
V
V
V
A
A
W
W
˚C
˚C
Ratings
min typ
70*
35
180
(130)
40(60)
max
(–)1
(–)1
400*
Unit
µA
µA
MHz
MHz
pF
140 S 280 200 T 400
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
92098HA (KT)/4137KI/D176TA, TS No.2046–1/4

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Parameter
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
Switching Time Test Circuit
2SB1165/2SD1722
Symbol
Conditions
VCE(sat) IC=(–)3A, IB=(–)0.15A
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
ton
tstg
IC=(–)3A, IB=(–)0.15A
IC=(–)10µA, IE=0
IC=(–)1mA, RBE=
IE=(–)10µA, IC=0
See specified Test Circuit
See specified Test Circuit
tf See specified Test Circuit
Ratings
min typ
220
(–280)
(–)0.95
(–)60
(–)50
(–)6
(50)50
500
(450)
20(20)
max
400
(–550)
(–)1.3
Unit
mV
mV
V
V
V
V
ns
ns
ns
ns
No.2046–2/4

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2SB1165/2SD1722
No.2046–3/4