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Ordering number:ENN2047A
PNP/NPN Epitaxial Planar Silicon Transistors
2SB1167/2SD1724
100V/3A Switching Applications
Features
· Relay drivers, high-speed inverters, converters.
Features
· Low collector-to-emitter saturation voltage.
· High fT.
· Excellent linearity of hFE.
· Fast switching time.
Package Dimensions
unit:mm
2043B
[2SB1167/2SD1724]
8.0
4.0
2.0
2.7
1.6
0.8
0.8
0.6 0.5
( ) : 2SB1167
Specifications
12 3
2.4
4.8
1 : Emitter
2 : Collector
3 : Base
SANYO : TO-126LP
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Symbol
VCBO
VCEO
VEBO
IC
ICP
Collector Dissipation
PC
Junction Temperature
Tj
Storage Temperature
Tstg
Electrical Characteristics at Ta = 25˚C
Tc=25˚C
Conditions
Ratings
()120
()100
()6
()3
()6
1.2
20
150
55 to +150
Unit
V
V
V
A
A
W
W
˚C
˚C
Parameter
Symbol
Conditions
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
ICBO
IEBO
hFE1
hFE2
VCB=()100V, IE=0
VEB=()4V, IC=0
VCE=()5V, IC=()0.5A
VCE=()5V, IC=()2A
Gain-Bandwidth Product
fT VCE=()10V, IC=()0.5A
* : The 2SB1167/2SD1724 are classified by 0.5A hFE as follows :
Rank
hFE
Q
70 to 140
R
100 to 200
Ratings
min typ max
Unit
()1 µA
()1 µA
70* 400*
40
(130)
MHz
180 MHz
Continued on next page.
ST
140 to 280 200 to 400
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
10904TN (KT)/92098HA (KT)/4137KI/D176TA, TS No.2047–1/4

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2SB1167/2SD1724
Continued from preceding page.
Parameter
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Symbol
Conditions
Cob VCB=()10V, f=1MHz
VCE(sat) IC=()1.5A, IB=()0.15A
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
IC=()1.5A, IB=()0.15A
IC=()10µA, IE=0
IC=()1mA, RBE=
IE=()10µA, IC=0
ton See specified Test Circuit
Storage Time
Fall Time
Switching Time Test Circuit
PW=20µs
D.C.1%
IB1
IB2
INPUT
VR
RB
tstg See specified Test Circuit
tf See specified Test Circuit
OUTPUT
RL
50
++
100µF
470µF
VBE= --5V
VCC=25V
IC=10IB1= --10IB2=1.5A
(For PNP, the polarity is reversed.)
Ratings
min typ
25(40)
(200)
150
()0.9
()120
()100
()6
(100)
100
900
(800)
50(50)
max
(500)
400
()1.2
Unit
pF
mV
mV
V
V
V
V
ns
ns
ns
ns
ns
--2.0
2SB1167
From top
--20mA
--1.6 --18mA
--16mA
--1.2
--0.8
IC -- VCE
--14mA
--12mA
--10mA
--8mA
--6mA
--4mA
--2mA
--0.4
0
0
--1.0
--0.8
--0.6
--0.4
--0.2
0
0
IB=0
--1 --2 --3 --4 --5
Collector-to-Emitter Voltage, VCE – V ITR09112
IC -- VCE
2SB1167
--4.-0-3m.5AmA
--3.0mA
--2.5mA
--2.0mA
--1.5mA
--1.0mA
--0.5mA
IB=0
--10 --20 --30 --40 --50
Collector-to-Emitter Voltage, VCE – V ITR09114
2.0
2SD1724
From top
20mA
1.6 18mA
16mA
14mA
1.2
IC -- VCE
12mA
10mA
8mA
6mA
0.8 4mA
0.4 2mA
0 IB=0
012345
Collector-to-Emitter Voltage, VCE – V ITR09113
IC -- VCE
1.0
5.0mA4.5mA
2SD1724
0.8 4.0mA
3.5mA
0.6 3.0mA
2.5mA
2.0mA
0.4
1.5mA
1.0mA
0.2
0.5mA
0 IB=0
0 10 20 30 40 50
Collector-to-Emitter Voltage, VCE – V ITR09115
No.2047–2/4

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2SB1167/2SD1724
IC -- VBE
IC -- VBE
--3.5 3.5
2SB1167
2SD1724
VCE= --5V
--3.0 3.0
VCE=5V
--2.5 2.5
--2.0 2.0
--1.5 1.5
--1.0 1.0
--0.5
0
0
1000
5
3
2
100
--0.2 --0.4 --0.6 --0.8 --1.0 --1.2
Base-to-Emitter Voltage, VBE – V ITR09116
hFE -- IC
2SB1167
VCE= --5V
Ta=75°C 25°C
--25°C
5
3
2
10
5
5 --0.01 2 3 5 --0.1 2 3 5 --1.0 2 3 5 --10
Collector Current, IC – A
ITR09118
fT -- IC
5
2SB1167 / 2SD1724
3 VCE=10V
2 2SD1724
2SB1167
100
7
5
3
2
10
23
5
3
2
--1000
(For PNP, minus sign is omitted.)
5 7 0.1
23
5 7 1.0
23
Collector Current, IC – A
ITR09120
VCE(sat) -- IC
2SB1167
IC / IB=10
5
3
2
--100
5
3
2
25°C
Ta=75°C
--25°C
--10
5 --0.01 2 3 5 --0.1 2 3 5 --1.0 2 3 5 --10
Collector Current, IC – A
ITR09122
0.5
0
0
1000
7
5
3
2
100
7
5
3
2
0.2 0.4 0.6 0.8 1.0 1.2
Base-to-Emitter Voltage, VBE – V ITR09117
hFE -- IC
2SD1724
VCE=5V
Ta=75°C
25°C
--25°C
10
7
5
5 0.01 2 3 5 0.1 2 3 5 1.0 2 3 5 10
Collector Current, IC – A
ITR09119
Cob -- VCB
2
2SB1167 / 2SD1724
f=1MHz
100
7
5
3
2S2DS1B7121467
2
10
7
5 (For PNP, minus sign is omitted.)
5 7 1.0
2 3 5 7 10
2 3 5 7 100 2
Collector-to-Base Voltage, VCB -- V ITR09121
VCE(sat) -- IC
5
2SD1724
3 IC / IB=10
2
1000
7
5
3
2
100
7
5
25°C
3
2
Ta=75°C
--25°C
10
5 0.01 2 3 5 0.1 2 3 5 1.0 2 3 5 10
Collector Current, IC – A
ITR09123
No.2047–3/4