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Ordering number:EN2114B
PNP Epitaxial Planar Silicon Transistor
2SB1205
Strobe High-Current Switching Applications
Applications
· Strobe, voltage regulators, relay drivers, lamp
drivers.
Features
· Adoption of FBET, MBIT processes.
· Low saturation voltage.
· Fast switching speed.
· Large current capacity.
· Small and slim package making it easy to make
2SB1205-applied sets smaller.
Package Dimensions
unit:mm
2045B
[2SB1205]
unit:mm
2044B
[2SB1205]
1 : Base
2 : Collector
3 : Emitter
4 : Collector
SANYO : TP
1 : Base
2 : Collector
3 : Emitter
4 : Collector
SANYO : TP-FA
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
92098HA (KT)/8219MO/4137KI/4116KI, TS No.2114–1/4

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2SB1205
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Junction Temperature
Storage Temperature
Tj
Tstg
Electrical Characteristics at Ta = 25˚C
Tc=25˚C
Conditions
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
Symbol
Conditions
ICBO
IEBO
hFE1
hFE2
fT
Cob
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BE)EBO
ton
tstg
tf
VCB=–20V, IE=0
VEB=–4V, IC=0
VCE=–2V, IC=500mA
VCE=–2V, IC=–4A
VCE=–5V, IC=–200mA
VCE=–10V, f=1MHz
IC=–3A, IB=–60mA
IC=–3A, IB=–60mA
IC=–10µA, IE=0
IC=–1mA, RBE=
IE=–10µA, IC=0
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
* : The 2SB1205 is classified by 500mA hFE as follows :
100 R 200 140 S 280 200 T 400
Switching Time Test Circuit
Ratings
–25
–20
–5
–5
–8
–0.5
1
10
150
–55 to +150
Unit
V
V
V
A
A
A
W
W
˚C
˚C
Ratings
min typ
100*
60
–25
–20
–5
320
60
–250
–1.0
40
200
10
max
–500
–500
400*
–500
–1.3
Unit
nA
nA
MHz
pF
mV
V
V
V
V
ns
ns
ns
No.2114–2/4

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2SB1205
No.2114–3/4