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Ordering number:EN2352A
PNP Epitaxial Planar Silicon Transistor
2SB1214
Driver Applications
Applications
· Motor drivers, hammer drivers, relay drivers.
Features
· High DC current gain.
· Darlington connection.
· Small and slim package permitting the 2SB1214-
applied sets to be made more compact.
Package Dimensions
unit:mm
2045B
[2SB1214]
unit:mm
2044B
[2SB1214]
1 : Base
2 : Collector
3 : Emitter
4 : Collector
SANYO : TP
1 : Base
2 : Collector
3 : Emitter
4 : Collector
SANYO : TP-FA
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
92098HA (KT)/8219MO/5217TA, TS No.2352–1/4

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2SB1214
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Junction Temperature
Storage Temperature
Tj
Tstg
Electrical Characteristics at Ta = 25˚C
Tc=25˚C
Conditions
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Electrical Connection
Symbol
Conditions
ICBO
IEBO
hFE1
hFE2
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
VCB=–60V, IE=0
VEB=–5V, IC=0
VCE=–2V, IC=–1A
VCE=–2V, IC=–2A
IC=–2A, IB=–4mA
IC=–2A, IB=–4mA
IC=–1mA, IE=0
IC=–25mA, RBE=
Ratings
–80
–60
–6
–3
–6
1
15
150
–55 to +150
Unit
V
V
V
A
A
W
W
˚C
˚C
Ratings
min typ
2000
1000
–80
–60
max
–10
–2.5
–1.5
–2.0
Unit
µA
mA
V
V
V
V
No.2352–2/4

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2SB1214
No.2352–3/4