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Ordering number:EN2539B
PNP/NPN Epitaxial Planar Silicon Transistors
2SB1215/2SD1815
High-Current Switching Applications
Applications
· Relay drivers, high-speed inverters, converters, and
other general high-current switching applications.
Features
· Low collector-to-emitter saturation voltage.
· Excllent linearity of hFE.
· Small-sized package permitting 2SB1215/2SD1815-
applied sets to be made small and slim.
· High fT.
· Fast switching time.
Package Dimensions
unit:mm
2045B
[2SB1215/2SD1815]
unit:mm
2044B
[2SB1215/2SD1815]
1 : Base
2 : Collector
3 : Emitter
4 : Collector
SANYO : TP
1 : Base
2 : Collector
3 : Emitter
4 : Collector
SANYO : TP-FA
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
92098HA (KT)/40196TS (KOTO) 8-9913/8229MO/4097TA, TS No.2539–1/5

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2SB1215/2SD1815
( ) : 2SB1215
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Junction Temperature
Storage Temperature
Tj
Tstg
Electrical Characteristics at Ta = 25˚C
Tc=25˚C
Conditions
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Symbol
Conditions
ICBO
IEBO
hFE1
hFE2
fT
VCB=(–)100V, IE=0
VEB=(–)4V, IC=0
VCE=(–)5V, IC=(–)0.5A
VCE=(–)5V, IC=(–)2A
VCE=(–)10V, IC=(–)0.5A
Output Capacitance
Collector-to-Emitter Saturation Voltage
Cob VCB=(–)10V, f=1MHz
VCE(sat) IC=(–)1.5A, IB=(–)0.15A
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
ton
tstg
IC=(–)1.5A, IB=(–)0.15A
IC=(–)10µA, IE=0
IC=(–)1mA, RBE=
IE=(–)10µA, IC=0
See specified Test Circuit
See specified Test Circuit
Fall Time
tf See specified Test Circuit
* : The 2SB1215/2SD1815 are classified by 100mA hFE as follows :
70 Q 140 100 R 200 140 S 280 200 T 400
Switching Time Test Circuit
Ratings
(–)120
(–)100
(–)6
(–)3
(–)6
1
20
150
–55 to +150
Unit
V
V
V
A
A
W
W
˚C
˚C
Ratings
min typ
70*
40
(–)120
(–)100
(–)6
(130)
180
(40)25
150
(–200)
(–)0.9
100
(800)
900
50
max
(–)1
(–)1
400*
400
(–500)
(–)1.2
Unit
µA
µA
MHz
MHz
pF
mV
mV
V
V
V
V
ns
ns
ns
ns
No.2539–2/5

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2SB1215/2SD1815
No.2539–3/5