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Ordering number:688H
PNP/NPN Epitaxial Planar Silicon Tranasistors
2SB827/2SD1063
50V/7A Switching Applicationsa
Applications
· Universal high current switching as solenoid driving,
high speed inverter and converter.
Features
· Low collector-to-emitter saturation voltage :
VCE(sat)=(–)0.4V max.
· Wide ASO.
Package Dimensions
unit:mm
2022A
[2SB827/2SD1063]
( ) : 2SB827
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Electrical Characteristics at Ta = 25˚C
Tc=25˚C
Conditions
Parameter
Symbol
Conditions
Collector Cutoff Current
ICBO VCB=(–)40V, IE=0
Emitter Cutoff Current
DC Current Gain
IEBO
hFE1
VEB=(–)4V, IC=0
VCE=(–)2V, IC=(–)1A
hFE2 VCE=(–)2V, IC=(–)5A
Gain-Bandwidth Product
fT VCE=(–)5V, IC=(–)1A
Collector-to-Emitter Saturation Voltage
VCE(sat) IC=(–)4A, IB=(–)0.4A
* : The 2SB827/2SD1063 are classified by 1A hFE as follows :
70 Q 140 100 R 200 140 S 280
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-3PB
Ratings
(–)60
(–)50
(–)6
(–)7
(–)14
60
150
–55 to +150
Unit
V
V
V
A
A
W
˚C
˚C
Ratings
min typ
70*
30
10
max
(–)0.1
(–)0.1
280*
(–)0.4
Unit
mA
mA
MHz
V
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
91098HA (KT)/4027KI/622KI No.688–1/4

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Parameter
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Fall Time
Storage Time
Switching Time Test Circuit
2SB827/2SD1063
Symbol
Conditions
V(BR)CBO
V(BR)CEO
V(BR)EBO
ton
tf
IC=(–)1mA, IE=0
IC=(–)1mA, RBE=
IE=(–)1mA, IC=0
See specified test circuit.
See specified test circuit.
tstg See specified test circuit.
Ratings
min typ
(–)60
(–)50
(–)6
0.2
(0.1)
0.3
(0.7)
0.9
max
Unit
V
V
V
µs
µs
µs
µs
µs
Unit (resistance : , capacitance : F)
No.688–2/4

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2SB827/2SD1063
No.688–3/4