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Ordering number:1018E
PNP/NPN Epitaxial Planar Silicon Darlington Transistors
2SB884/2SD1194
Driver Applications
Applications
· Motor drivers, printer hammer drivers, relay drivers,
voltage regulator control.
Features
· High DC current gain.
· High current capacity and wide ASO.
· Low saturation voltage.
Package Dimensions
unit:mm
2010C
[2SB884/2SD1194]
( ) : 2SB884
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Junction Temperature
Storage Temperature
Tj
Tstg
Electrical Characteristics at Ta = 25˚C
Tc=25˚C
Conditions
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector-to-Emitter Saturation Voltage
Symbol
Conditions
ICBO
IEBO
hFE
VCE(sat)
VCB=(–)80V, IE=0
VEB=(–)5V, IC=0
VCE=(–)3V, IC=(–)1.5A
IC=(–)1.5A, IB=(–)3mA
Base-to-Emitter Saturation Voltage
Gain-Bandwidth Product
VBE(sat) IC=(–)1.5A, IB=(–)3mA
fT VCE=(–)5V, IC=(–)1.5A
JEDEC : TO-220AB 1 : Base
EIAJ : SC-46
2 : Collector
3 : Emitter
Ratings
(–)110
(–)100
(–)6
(–)3
(–)5
1.75
30
150
–55 to +150
Unit
V
V
V
A
A
W
W
˚C
˚C
Ratings
min typ
1500
4000
0.9
(–1.0)
20
max
(–)0.1
(–)3
(–)1.5
(–)2.0
Unit
mA
mA
V
V
V
MHz
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
91098HA (KT)/10996TS (KOTO) 8-4529/D251MH/4027KI/D222KI No.1018–1/4

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Parameter
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
Switching Time Test Circuit
2SB884/2SD1194
Symbol
Conditions
V(BR)CBO
V(BR)CEO
ton
IC=(–)5mA, IE=0
IC=(–)50mA, RBE=
See specified Test Circuit
tstg See specified Test Circuit
tf See specified Test Circuit
Electrical Connection
Ratings
min typ
(–)110
(–)100
(0.8)
0.7
(2.4)
5.0
(1.2)
1.2
max
Unit
V
V
µs
µs
µs
µs
µs
µs
No.1018–2/4

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2SB884/2SD1194
No.1018–3/4