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Ordering number:EN3217
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1331/2SC3361
High-Speed Switching Applications
Features
· Fast switching speed.
· High breakdown voltage.
· Small-sized package permitting the 2SA1331/
2SC3361-applied sets to be made small and slim.
Switching Time Test Circuit
Package Dimensions
unit:mm
2018A
[2SA1331/2SC3361]
( ) : 2SA1331
(For PNP, the polarity is reversed)
Unit (resistance : , capacitance : F)
Specifications
C : Collector
B : Base
E : Emitter
SANYO : CP
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Symbol
Conditions
Ratings
Unit
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
Junction Temperature
Storage Temperature
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
(–)60
(–)50
(–)5
(–)150
(–)400
(–)40
150
125
–55 to +125
V
V
V
mA
mA
mA
mW
˚C
˚C
Electrical Characteristics at Ta = 25˚C
Parameter
Symbol
Conditions
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Common Base Output Capacitance
ICBO
IEBO
hFE
fT
Cob
VCB=(–)40V, IE=0
VEB=(–)4V, IC=0
VCE=(–)6V, IC=(–)1mA
VCE=(–)6V, IC=(–)1mA
VCB=(–)6V, f=1MHz
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Delay Time
Rise Time
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
td
tr
IC=(–)10mA, IB=(–)1mA
IC=(–)10mA, IB=(–)1mA
IC=(–)10µA, IE=0
IC=(–)1mA, RBE=
IE=(–)10µA, IC=0
See specified Test Circuit
See specified Test Circuit
Storage Time
tstg See specified Test Circuit
Fall Time
tf See specified Test Circuit
* : The 2SA1331/2SC3361 are classified by 1mA hFE as follows :
90 4 180 135 5 270 200 6 400
Marking 2SA1331 : O, 2SC3361 : S
hFE rank : 4, 5, 6
Ratings
min typ
90*
100
(3.5)
2.7
(–)0.1
(–)0.75
(–)60
(–)50
(–)5
40
(120)
80
(190)
230
(200)
160
max
(–)0.1
(–)0.1
400*
(–)0.4
(–)1.1
Unit
µA
µA
MHz
pF
V
V
V
V
V
ns
ns
ns
ns
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
71598HA (KT)/7139MO, TS No.3217-1/4

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2SA1331/2SC3361
No.3217-2/4

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2SA1331/2SC3361
No.3217-3/4

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2SA1331/2SC3361
No products described or contained herein are intended for use in surgical implants, life-support systems,
aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and
the like, the failure of which may directly or indirectly cause injury, death or property loss.
Anyone purchasing any products described or contained herein for an above-mentioned use shall:
Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates,
subsidiaries and distributors and all their officers and employees, jointly and severally, against any
and all claims and litigation and all damages, cost and expenses associated with such use:
Not impose any responsibilty for any fault or negligence which may be cited in any such claim or
litigation on SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors or any of
their officers and employees jointly or severally.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guarant-
eed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees
are made or implied regarding its use or any infringements of intellectual property rights or other rights of
third parties.
This catalog provides information as of July, 1998. Specifications and information herein are subject to
change without notice.
PS No.3217-4/4