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Ordering number:ENN2005A
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1416/2SC3646
High-Voltage Switching Applications
Features
· Adoption of FBET, MBIT processes.
· High breakdown voltage and large current capacity.
· Fast switching time.
· Ultrasmall size making it easy to provide high-
density, small-sized hybrid ICs.
Package Dimensions
unit:mm
2038A
[2SA1416/2SC3646]
4.5
1.6 1.5
( ) : 2SA1416
Specifications
Absolute Maximum Ratings at Ta = 25˚C
0.4 0.5
3 1.5 2
3.0
1
0.75
0.4
1 : Base
2 : Collector
3 : Emitter
SANYO : PCP
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Symbol
VCBO
VCEO
VEBO
IC
ICP
Collector Dissipation
PC
Junction Temperature
Storage Temperature
Tj
Tstg
Electrical Characteristics at Ta = 25˚C
Conditions
Moutned on ceramic board (250mm2×0.8mm)
Parameter
Symbol
Conditions
Collector Cutoff Current
ICBO VCB=()100V, IE=0
Emitter Cutoff Current
IEBO VEB=()4V, IC=0
DC Current Gain
hFE VCE=()5V, IC=()100mA
Gain-Bandwidth Product
fT VCE=()10V, IC=()100mA
* : The 2SA1416/2SC3646 are classified by 100mA hFE as follows :
Rank
R
S
T
Marking
hFE 100 to 200
2SA1416 : AB
2SC3646 : CB
140 S 280 200 to 400
hFE rank : R, S, T
Ratings
()120
()100
()6
()1
()2
500
1.3
150
55 to +150
Unit
V
V
V
A
A
mW
W
˚C
˚C
Ratings
min typ max
Unit
()100 nA
()100 nA
100*
400*
120 MHz
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
O3103TN (KT)/71598HA (KT)/3277KI/N255MW, TS No.2005-1/4

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2SA1416/2SC3646
Continued from preceding page.
Parameter
Symbol
Conditions
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Votage
Turn-ON Time
Storage Time
Fall Time
Switching Time Test Circuit
PW=20µs
D.C.1%
IB1
IB2
INPUT
VR
50
RB
+
100µF
Cob VCB=()10V, f=1MHz
VCE(sat) IC=()400mA, IB=()40mA
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
IC=()400mA, IB=()40mA
IC=()10µA, IE=0
IC=()1mA, RBE=
IE=()10µA, IC=0
ton See specified Test Circuit.
tstg See specified Test Circuit.
tf See specified Test Circuit.
RL
+
470µF
Ratings
min typ
(13)
8.5
(0.2)
0.1
()0.85
()120
()100
()6
(80)
80
(700)
850
(40)
50
max
(0.6)
0.4
()1.2
Unit
pF
pF
V
V
V
V
V
V
ns
ns
ns
ns
ns
ns
--5V 50V
10IB1=--10IB2=IC=400mA
(For PNP, the polarity is reversed.)
--1.0
2SA1416
--0.8 --25mA
--20mA
--0.6
IC -- VCE
--30mA
--15mA --10mA
--5mA
--3mA
--0.4 --2mA
--1mA
--0.2
1.0
2SC3646
0.8
0.6
0.4
0.2
IC -- VCE
30mA
25mA
20mA
15mA
10mA
5mA
3mA
2mA
1mA
0
0
--500
--400
--300
--200
--100
IB=0
--1 --2 --3 --4 --5
Collector-to-Emitter Voltage, VCE – V ITR03526
IC -- VCE
--2.5mA
--2.0mA
2SA1416
--1.5mA
--1.0mA
--0.5mA
IB=0
0
012345
Collector-to-Emitter Voltage, VCE – V ITR03527
IC -- VCE
500
2.0mA
2SC3646
400
1.5mA
300
1.0mA
200
0.5mA
100
IB=0
00 --10 --20 --30 --40 --50
Collector-to-Emitter Voltage, VCE – V ITR03528
IB=0
0
0 10 20 30 40 50
Collector-to-Emitter Voltage, VCE – V ITR03529
No.2005-2/4

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2SA1416/2SC3646
--1.2 IC -- VBE
IC -- VBE
1.2
2SA1416
2SC3646
VCE=--5V
--1.0
1.0
VCE=5V
--0.8
0.8
--0.6
0.6
--0.4
0.4
--0.2
0.2
0
0
1000
7
5
3
2
100
7
5
3
2
--0.2 --0.4 --0.6 --0.8 --1.0 --1.2
Base-to-Emitter Voltage, VBE – V ITR03530
hFE -- IC
2SA1416
VCE=--5V
Ta=75°C
25°C
--25°C
10 7 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3
Collector Current, IC – A
ITR03532
--10 VBE(sat) -- IC
2SA1416
7 IC / IB=10
5
3
2
0
0
1000
7
5
3
2
100
7
5
3
2
0.2 0.4 0.6 0.8 1.0 1.2
Base-to-Emitter Voltage, VBE – V ITR03531
hFE -- IC
2SC3646
VCE=5V
Ta=75°C
25°C
--25°C
10 7 0.01
10
7
5
2 3 5 7 0.1
2 3 5 7 1.0
23
Collector Current, IC – A
ITR03533
VBE(sat) -- IC
2SC3646
IC / IB=10
3
2
--1.0
7
5
Ta=--25°C
25°C 75°C
3
7 --0.01
--1000
7
5
2 3 5 7 --0.1 2 3 5 7 --1.0 2
Collector Current, IC – A
ITR03534
VCE(sat) -- IC
2SA1416
IC / IB=10
3
2
--100
7
5
3
Ta=75°C
--25°C
25°C
2
7 --0.01
2 3 5 7 --0.1 2 3 5 7 --1.0 2
Collector Current, IC – A
ITR03536
1.0 Ta=--25°C
7
5 25°C 75°C
3
7 0.01
1000
7
5
23
5 7 0.1
2 3 5 7 1.0
2
Collector Current, IC – A
ITR03535
VCE(sat) -- IC
2SC3646
IC / IB=10
3
2
100
7
5
3
2
7 0.01
Ta=75°C
25°C --25°C
2 3 5 7 0.1
2 3 5 7 1.0
2
Collector Current, IC – A
ITR03537
No.2005-3/4