2SB1266.pdf 데이터시트 (총 3 페이지) - 파일 다운로드 2SB1266 데이타시트 다운로드

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SMD Type
PNP Transistors
2SB1266
Transistors
Features
Suitable for sets whose height is restricted
Complementary to 2SD1902
TO-252
6.50+0.15
-0.15
5.30+0.2
-0.2
2.30 +0.1
-0.1
0.50 +0.8
-0.7
0.80+0.1
-0.1
0.127
m ax
Unit: mm
2.3
4 .60 +0.15
-0.15
0.60+ 0.1
- 0.1
1 Base
2 Collector
3 Emitter
Absolute Maximum Ratings Ta = 25
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Current - Pulse
Collector Power Dissipation
Junction Temperature
Storage Temperature range
Tc = 25°C
Ta = 25°C
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
TJ
Tstg
Rating
-60
-60
-6
-3
-8
30
1.65
150
-55 to 150
Electrical Characteristics Ta = 25
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
Base - emitter voltage
DC current gain
Collector output capacitance
Transition frequency
Symbol
Test Conditions
VCBO Ic= -1 mAIE=0
VCEO Ic= -5 mA, RBE=
VEBO IE= -1 mAIC=0
ICBO VCB= -50V , IE=0
IEBO VEB= -5V , IC=0
VCE(sat) IC=-2 A, IB=-200 mA
VBE(sat) IC=-2 A, IB=-200 mA
VBE VCE= -5V, IC= -500 mA
VCE= -5V, IC= -500 mA
hFE
VCE= -5V, IC= -3 A
Cob VCB= -10V, IE= 0,f=1MHz
fT VCE= -5V, IC= -500 mA
Classification of hfe(1)
Type
2SB1266-Q
Range
70-140
2SB1266-R
100-200
2SB1266-S
140-280
Unit
V
A
W
Min Typ Max Unit
-60
-60 V
-6
-100
-100
uA
-0.4 -1
-1.2 V
-1
70 280
20
60 pF
8 MHz
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SMD Type
Typical Characterisitics
PNP Transistors
2SB1266
Transistors
2 www.kexin.com.cn

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SMD Type
Typical Characterisitics
PNP Transistors
2SB1266
Transistors
www.kexin.com.cn 3